Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
In this study, resistive random-access memory (RRAM)-based crossbar arrays with a
memristor W/TiO 2/HfO 2/TaN structure were fabricated through atomic layer deposition …
memristor W/TiO 2/HfO 2/TaN structure were fabricated through atomic layer deposition …
Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices
High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …
Determination of hafnium zirconium oxide interfacial band alignments using internal photoemission spectroscopy and X-ray photoelectron spectroscopy
Doped ferroelectric HfO2 is highly promising for integration into complementary metal-oxide
semiconductor (CMOS) technology for devices such as ferroelectric nonvolatile memory and …
semiconductor (CMOS) technology for devices such as ferroelectric nonvolatile memory and …
Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas
Tunnel-barrier rectifiers comprising single and triple insulator configurations have been
fabricated by atomic layer deposition (ALD) to investigate the insulator (Al 2 O 3, Ta 2 O 5 …
fabricated by atomic layer deposition (ALD) to investigate the insulator (Al 2 O 3, Ta 2 O 5 …
Internal Photoemission Spectroscopy Measurements of Interfacial Energy Barriers in Operating TaN/Hf0.5Zr0.5O2/TaN Metal/Ferroelectric/Metal (MFM) Devices
J Haglund, T Mimura, JF Ihlefeld… - ACS Applied Electronic …, 2024 - ACS Publications
The effect of the “waking” and subsequent “poling” operations on the electron barriers at
both top and bottom electrode interfaces in operating ferroelectric hafnium zirconium oxide …
both top and bottom electrode interfaces in operating ferroelectric hafnium zirconium oxide …
[HTML][HTML] Precision defect engineering of metal/insulator/metal diodes using atomic layer deposition to localize Ni impurities in Al2O3 tunnel barriers
Extrinsic impurity defect engineering is demonstrated to increase the maximum asymmetry
of metal/insulator/metal (MIM) tunnel diodes. Using atomic layer deposition, transition metal …
of metal/insulator/metal (MIM) tunnel diodes. Using atomic layer deposition, transition metal …
[HTML][HTML] Improved properties of atomic layer deposited ruthenium via postdeposition annealing
M Hayes, MA Jenkins, J Woodruff, DF Moser… - Journal of Vacuum …, 2021 - pubs.aip.org
The resistivity, morphology, and effective work function of thin film ruthenium deposited by
thermal atomic layer deposition (ALD) using η 4-2, 3-dimethylbutadiene ruthenium …
thermal atomic layer deposition (ALD) using η 4-2, 3-dimethylbutadiene ruthenium …
Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes
R Yuan, W Xia, M Xu, Z Miao, S Wu, X Zhang, J He… - Current Applied …, 2020 - Elsevier
Based on the bipolar resistive switching (RS) characteristics of SnO 2 films, we have
fabricated a new prototypical device with sandwiched structure of Metal/SnO 2/fluorine …
fabricated a new prototypical device with sandwiched structure of Metal/SnO 2/fluorine …
Ga2O3 metal–insulator-semiconductor solar-blind photodiodes with plasmon-enhanced responsivity and suppressed internal photoemission
CD Zhang, FF Ren, M Yu, B Zhang, S Gu… - Journal of Physics D …, 2023 - iopscience.iop.org
Abstract Metal-semiconductor-metal (MSM) architectures are popular for achieving high-
responsivity Ga 2 O 3 solar-blind photodetectors (SBPDs), however, the hot-electron …
responsivity Ga 2 O 3 solar-blind photodetectors (SBPDs), however, the hot-electron …
[PDF][PDF] 一个可靠和准确的光电产额谱模型及应用
刘昶时 - 机械工程学报, 2021 - wulixb.iphy.ac.cn
光电产额谱的实验和理论研究对所有涉及光电的材料和器件都很重要, 其中能够准确地从入射
光子能量计算光电产额对最大限度地从光电产额谱获取光电材料和器件的电性能的微观信息至 …
光子能量计算光电产额对最大限度地从光电产额谱获取光电材料和器件的电性能的微观信息至 …