In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals
Q Shao, R Shen, H Tian, X Pi, D Yang… - Journal of Physics D …, 2024 - iopscience.iop.org
Abstract 4H silicon carbide (4H-SiC) is one of the most promising candidates in high-power
and high-frequency devices, owing to its excellent properties such as wide bandgap, high …
and high-frequency devices, owing to its excellent properties such as wide bandgap, high …
Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam
A Yoneyama, K Ishiji, A Sakaki, Y Kobayashi… - Scientific Reports, 2023 - nature.com
X-ray topography is a powerful method for analyzing crystal defects and strain in crystalline
materials non-destructively. However, conventional X-ray topography uses simple X-ray …
materials non-destructively. However, conventional X-ray topography uses simple X-ray …
Comparing basal and prismatic slips induced by thermal stresses in 4H-SiC crystals
B Xu, L Xuan, X Pi, D Yang, X Han - CrystEngComm, 2024 - pubs.rsc.org
Basal and prismatic slips induced by thermoelastic stresses during the growth of 4H-SiC are
investigated by using the finite element method (FEM) and considering factors such as the …
investigated by using the finite element method (FEM) and considering factors such as the …