Atomistic insights into ultrafast SiGe nanoprocessing
G Calogero, D Raciti, D Ricciarelli… - The Journal of …, 2023 - ACS Publications
Controlling ultrafast material transformations with atomic precision is essential for future
nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase …
nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase …
Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering
Vertical gate-all-around (V-GAA) represents the ultimate configuration in the forthcoming
transistor industry, but it still encounters challenges in the semiconductor community. This …
transistor industry, but it still encounters challenges in the semiconductor community. This …
[HTML][HTML] Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation
Vertical junctionless gate-all-around nanowire transistors show excellent electrical
performance and can be fabricated using a top-down approach in conventional CMOS …
performance and can be fabricated using a top-down approach in conventional CMOS …
Laser Annealed Two Dimensional SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique,
particularly when tightly controlled heating and melting are necessary. In the realm of …
particularly when tightly controlled heating and melting are necessary. In the realm of …
Laser‐Annealed SiO2/Si1−xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation
Ultraviolet nanosecond laser annealing (UV‐NLA) proves to be an important technique,
particularly when tightly controlled heating and melting are necessary. In the realm of …
particularly when tightly controlled heating and melting are necessary. In the realm of …
Advanced contacts on 3D nanostructured channels for vertical transport gate-all-around transistors
Gate-all-around (GAA) transistors are anticipated to have a substantial impact in achieving
logic scaling in the nanometer technology node range, serving as a substitute for the current …
logic scaling in the nanometer technology node range, serving as a substitute for the current …