Performance analysis of multi-channel-multi-gate-based junctionless field effect transistor
In this paper, a multi-gate junctionless field-effect transistor with a quad gate and multiple
channels has been proposed and thoroughly simulated. The proposed device offers a lower …
channels has been proposed and thoroughly simulated. The proposed device offers a lower …
Study of analog performance of common source amplifier using rectangular core–shell based double gate junctionless transistor
A new state of the art double gate junctionless transistor (DGJLT) namely the rectangular
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …
Correlation of core thickness and core doping with gate & spacer dielectric in rectangular core shell double gate junctionless transistor
The impression of gate dielectric and spacer dielectric on the performance of rectangular
core shell double gate junctionless transistor (RCS-DGJLT) using extensive simulations is …
core shell double gate junctionless transistor (RCS-DGJLT) using extensive simulations is …
Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope
An alternative way to overcome the Boltzmann “tyranny” limit of the MOSFET subthreshold
slope (SS)(60 mV/decade at room temperature) is to employ quantum coupling materials in …
slope (SS)(60 mV/decade at room temperature) is to employ quantum coupling materials in …
DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy
MN Chang, YS Wu, CJ Lin, YH Hsueh, CJ Su, YJ Lee - Nanomaterials, 2024 - mdpi.com
This study developed a DC-free technique that used dark-mode scanning capacitance
microscopy (DM-SCM) with a small-area contact electrode to evaluate and image equivalent …
microscopy (DM-SCM) with a small-area contact electrode to evaluate and image equivalent …
Analytical Model of Conventional and Rectangular Core-Shell-based Double Gate Junctionless MOS
In this paper, an analytical, detailed two-dimensional potential profile model of a newly
proposed rectangular core-shell-based double-gate junctionless metal oxide semiconductor …
proposed rectangular core-shell-based double-gate junctionless metal oxide semiconductor …
Performance Investigation of Inverted T-shaped Heterojunction FinFET along with Oxide Stacking.
The performance of the newly proposed inverted T-shaped heterojunction FinFET (⊥-
FinFET) with the concept of oxide stacking (L-FinFET_OS) is discussed and compared with …
FinFET) with the concept of oxide stacking (L-FinFET_OS) is discussed and compared with …