AlGaN LEDs emitting< 230 nm UV light were fabricated on sapphire substrates. We
employed a quantum well (QW) with an extremely thin barrier to enhance the quantum …

White light-emitting diodes (WLEDs) have advantages of high efficiency, energy saving, and
long working-life, which are ideal choice for next generation of solid-state light sources …

A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to
show improved carrier injection into the multi-quantum well region. The structures of …

This work presents a new device architecture integrating multiple poly (methyl
methacrylate)(PMMA) electron‐blocking layers (EBL) in quantum dot light‐emitting diodes …

We investigated the hole injection mechanism in InGaN/GaN blue light-emitting diodes by
growing monolithic dual-wavelength multiple-quantum-wells and measuring the …

In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as
the dielectric layers in p+-Al0. 55Ga0. 45N/AlGaN/n+-Al0. 55Ga0. 45N polarization tunnel …

In this paper, a high-efficiency InGaN photo cell irradiated by 532 nm laser (at green
wavelength) with AlGaN electron blocking layer (EBL) is proposed based on the blue-green …

In this chapter, we propose a hole accelerator, which is made of a polarization mismatched p-
electron-blocking layer (EBL)/p-GaN/p-Al x Ga1− x N heterojunction. By setting III-nitride …

The optical performance and relevant physical properties of near-ultraviolet (NUV) GaN-
based light-emitting diodes (LEDs) are investigated. Specifically, the influence of traditional …

An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based
deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain …