In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

Semiconductors such as elemental silicon allowing both p‐type and n‐type doping are the
backbone of the current microelectronics industry, while the continuous progress in …

We developed a low-temperature atomic layer deposition route to deposit phase pure and
crystalline hematite (α-Fe2O3) films at 230° C without the need for postannealing …

For present work, magnesium ferrite nanoparticles were synthesized using nitrates of metal
ions and citric acid. Crystallite size of these nanoparticles varies from 2.1±0.1 to 62±10 nm …

Multiferroic materials displaying coupled ferroelectric and ferromagnetic order parameters
could provide a means for data storage whereby bits could be written electrically and read …

In this study, a Titanium (Ti) doped α-Fe 2 O 3 (hematite) thin layer was synthesized onto a
glass substrate, employing the simultaneous DC and RF magnetron sputtering method. The …

This work reports the fabrication of memristive devices based on iron oxide (Fe 2 O 3) thin
films grown by atomic layer deposition (ALD) using ferrocene as iron precursor and ozone …

Fe 2 O 3 thin films have a wide range of applications in gas sensing, biosensing,
optoelectronics, spintronics, etc. In this paper, pure and Mg doped Fe 2 O 3 thin films are …

Vapor phase deposited iron oxide nanostructures are promising for fabrication of solid state
chemical sensors, photoelectrodes for solar water splitting, batteries, and logic devices. The …

Nanotubular iron (III) oxide electrodes are optimized for catalytic efficiency in the water
oxidation reaction at neutral pH. The nanostructured electrodes are prepared from anodic …