Chemical mechanical planarization: slurry chemistry, materials, and mechanisms

M Krishnan, JW Nalaskowski, LM Cook - Chemical reviews, 2010 - ACS Publications
The concept of chemical mechanical planarization (CMP) was invented in IBM in the early
1980s by Klaus D. Beyer in an attempt to create a highly planar surface and enable …

Mechanical stability of porous low-k dielectrics

K Vanstreels, C Wu, MR Baklanov - ECS Journal of Solid State …, 2014 - iopscience.iop.org
This paper reviews the mechanical and fracture properties of porous ultralow-k dielectrics
with the focus on chip package interaction related issues. It is shown that the mechanical …

Film property requirements for hermetic low-k a-SiOxCyNz: H dielectric barriers

SW King, D Jacob, D Vanleuven, B Colvin… - ECS Journal of Solid …, 2012 - iopscience.iop.org
Continued reduction in resistance-capacitance (RC) delays in nano-electronic Cu
interconnect structures will require new materials with increasingly lower dielectric constants …

Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks

H Li, TY Tsui, JJ Vlassak - Journal of Applied Physics, 2009 - pubs.aip.org
Among various low-dielectric constant (low-k⁠) materials under development, organosilicate
glasses (OSGs) containing nanometer-size pores are leading candidates for use as …

In situ observation of water behavior at the surface and buried interface of a low-k dielectric film

X Zhang, JN Myers, JD Bielefeld, Q Lin… - ACS applied materials …, 2014 - ACS Publications
Water adsorption in porous low-k dielectrics has become a significant challenge for both
back-end-of-line integration and reliability. A simple method is proposed here to achieve in …

Molecular mobility under nanometer scale confinement

TS Kim, RH Dauskardt - Nano letters, 2010 - ACS Publications
The mobility of organic molecules under nanoscale confinement differs greatly from that in
the bulk. In this study we show that the conventional free volume dependent mobility …

Surfactant-controlled damage evolution during chemical mechanical planarization of nanoporous films

TS Kim, T Konno, RH Dauskardt - Acta materialia, 2009 - Elsevier
The integration of nanoporous organosilicate thin films involving chemical mechanical
planarization (CMP) is a significant challenge due the evolution of defects in the films during …

Properties of organosilicate low-k films with 1, 3-and 1, 3, 5-benzene bridges between Si atoms

C Liu, C Lv, N Kohler, X Wang, H Lin… - Japanese Journal of …, 2020 - iopscience.iop.org
Organosilicate (OSG) low dielectric constant films containing different concentrations of 1, 3-
and 1, 3, 5-benzene bridges between Si atoms are fabricated using 1, 3, 5-tribromobenzene …

Integration challenges of nanoporous low dielectric constant materials

TS Kim, RH Dauskardt - IEEE transactions on device and …, 2009 - ieeexplore.ieee.org
The reliable integration of nanoporous low dielectric constant (k) materials is challenging
due to their vulnerability to delamination, cohesive cracking, and diffusion. We review …

Adhesion degradation and water diffusion in nanoporous organosilicate glass thin film stacks

Y Lin, TY Tsui, JJ Vlassak - Journal of The Electrochemical …, 2009 - iopscience.iop.org
The diffusion of water in nanoporous organosilicate glass (NPOSG) film stacks causes
significant adhesion degradation of the capping layer on top of the NPOSG. We have used …