Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …

Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

Ga2O3 is a wide-band gap semiconductor of emergent importance for applications in
electronics and optoelectronics. However, vital information of the properties of complex …

Appropriate gate dielectrics must be identified to fabricate metal–insulator–semiconductor
field-effect transistors (MISFETs); however, this has been challenging for compound …

This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga 2 O 3
films with the aim of meeting the requirements to act as drift layers for high-power electronic …

We have systematically studied the growth, by the Czochralski method, and basic physical
properties of a 2 cm and 2 in. diameter bulk β-(Al x Ga 1− x) 2 O 3 single crystal with [Al]= 0 …

A novel casting method was developed to grow β-Ga 2 O 3 bulk single crystals without using
a seed crystal. After separation from the crucible and processing, 2-inch diameter single …

The thermal stability of different Schottky contacts (Au, Pt, and Ni) on (100) β‐Ga2O3 single
crystals grown by the Czochralski method is investigated. Besides the examination of the …

The growth of large-diameter high-resistivity β-Ga 2 O 3 (010) substrates is important for the
low-cost production of lateral Ga 2 O 3 devices. We grew a 2 inch diameter Fe-doped high …

In this work, we explored the growth regime of (100) β-Ga 2 O 3 homoepitaxial films on
substrates with different miscut angles (1, 2, and 4) in the MOVPE system. Under a low O …