Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement
H Aghandeh, SAS Ziabari - Superlattices and Microstructures, 2017 - Elsevier
This study investigates a junctionless tunnel field-effect transistor with a dual material gate
and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the …
and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the …
Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance
Abstract Tunnel FETs (TFETs) need to meet certain conditions to be useful for analog/RF
circuit applications, including a steep subthreshold slope, high current driving capability, and …
circuit applications, including a steep subthreshold slope, high current driving capability, and …
Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric
In this research article, a junctionless tunnel field-effect transistor (JLTFET) based on the
charge plasma concept has been proposed and analyzed using novel coalescence of …
charge plasma concept has been proposed and analyzed using novel coalescence of …
A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept
SH Tahaei, SS Ghoreishi, R Yousefi… - Superlattices and …, 2019 - Elsevier
In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed
and investigated. The presented structure uses two isolated gates with the same work …
and investigated. The presented structure uses two isolated gates with the same work …
Investigation of ambipolar conduction and RF stability performance in novel germanium source dual halo dual dielectric triple material surrounding gate TFET
In this study, we present an ambipolar conduction and RF stability performance for a
Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET …
Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET …
RF Perfomance Based Comprehensive Review on Homo and Hetero Structure of DG-JL-TFET
R Tamilarasi, S Karthik - 2023 7th International Conference on …, 2023 - ieeexplore.ieee.org
This exhaustive review focuses on the RF performance of Double-Gate Junctionless Tunnel
Field-Effect Transistors (DG-JL-TFETs) in both homo and hetero-structures. These TFETs …
Field-Effect Transistors (DG-JL-TFETs) in both homo and hetero-structures. These TFETs …
Influence of germanium source dual halo dual dielectric triple material surrounding gate tunnel FET for improved analog/RF performance
This paper investigates the RF Stability performance of the Germanium Source Dual Halo
Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge (SRC)-DH-DD-TM-SG …
Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge (SRC)-DH-DD-TM-SG …
An asymmetric nanoscale SOI MOSFET by means of a PN structure as virtual Hole's well at the source side
Z Ramezani, AA Orouji - Silicon, 2019 - Springer
This paper suggests and investigates a pn structure, which emulates as a MOSFET. In the
proposed structure we utilize an L-shape contact with a proper work function over the source …
proposed structure we utilize an L-shape contact with a proper work function over the source …
Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach
R Molaei Imen Abadi, SA Sedigh Ziabari - Applied Physics A, 2016 - Springer
In this paper, a first qualitative study on the performance characteristics of dual-work function
gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is …
gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is …
Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications
A simple continuous analytical model is developed for the drain current of unipolar junction
dual material double gate MOSFET (UJDMDG). The model is based on electrostatic …
dual material double gate MOSFET (UJDMDG). The model is based on electrostatic …