Dans le domaine des applications avioniques, des dispositifs d'électronique de puissance
sont susceptible d'être placés sur le réacteur avec, dans le pire des cas, une température …

Some power electronics applications reveal performance weakness of fast recovery silicon
diodes, in spite of significant advance made in their switching performance. The maximum …

Few studies have examined the deposition of polytetrafluoroethylene (PTFE) using additive
manufacturing and their subsequent properties in microwave devices. The present study …

Typical experimental blocking IV characteristics measured from room temperature up to high
junction temperature for commercial thyristors available on the market at this time are …

Examples of reverse (blocking) IV characteristics for PN junctions from available commercial
power diodes and thyristors are shown. The surface leakage component of the junction …

Demonstrated within this thesis is the use of sensors in extreme environments which is an
important field of study considering the special nature associated with such deployments …

A temperature of 200degC for the PN junction of power silicon devices (diodes, thyristors,
transistors) is known as a limit for their reliable performance. PN junction failure after …

By suitable change of the junction-base (heatsink) thermal resistance for commercially
available power diode dice, it has been found out that at high temperature internal …

The operation of commercial power silicon devices, available at this time, is not possible
above 175-200/spl deg/C junction temperature, without risk of failure. The surface leakage …

Data sheets of commercial power semiconductor devices and modules available at this time
on the market indicate a maximum permissible junction temperature specified in a range of …