Engineering complex synaptic behaviors in a single device: Emulating consolidation of short-term memory to long-term memory in artificial synapses via dielectric …

J Tao, D Sarkar, S Kale, PK Singh, R Kapadia - Nano Letters, 2020 - ACS Publications
As one of the key neuronal activities associated with memory in the human brain, memory
consolidation is the process of the transition of short-term memory (STM) to long-term …

High mobility large area single crystal III–V thin film templates directly grown on amorphous SiO2 on silicon

J Tao, D Sarkar, S Weng, T Orvis, R Ahsan… - Applied Physics …, 2020 - pubs.aip.org
In this Letter, we report the direct growth of single crystal III–V thin film mesas on amorphous
SiO2 on Si using templated liquid phase growth. Unlike previous works, where crystal sizes …

Low temperature growth of crystalline semiconductors on nonepitaxial substrates

D Sarkar, S Weng, D Yang, J Tao… - Advanced Materials …, 2020 - Wiley Online Library
In this work, a low temperature templated liquid phase (LT‐TLP) growth process is
presented, that enables one to directly grow high optoelectronic quality single crystalline …

Monolithic high-mobility InAs on oxide grown at low temperature

D Sarkar, J Tao, R Ahsan, D Yang, T Orvis… - ACS Applied …, 2020 - ACS Publications
We demonstrate high electron mobility single-crystal InAs mesas monolithically integrated
on amorphous dielectric substrates at a growth temperature of 300° C. Critically, a room …

Formation Mechanism of InP Films by Phosphidation under Controlled Chemical Potential and Wetting Behavior

R Katsube, Y Yang, S Nakatsuka… - ACS Applied Electronic …, 2019 - ACS Publications
The recent developments on the templated liquid-phase (TLP) growth process of the growth
enabled bottom-up synthesis of indium phosphide (InP)-based optoelectronic devices on …

Building Blocks for 3D Integrated Circuits: Single Crystal Compound Semiconductor Growth and Device Fabrication on Amorphous Substrates

D Sarkar - 2020 - search.proquest.com
Over the past five decades, the world has made rapid technological progress supported by
the advancement in solid-state electronics and photonics. Referred to as the Moore's Law …

Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate Oxide

D Sarkar, S Weng, Y Xu, F Greer… - 2019 Device Research …, 2019 - ieeexplore.ieee.org
One of the major challenges for realizing 3D integrated circuits is the ability to integrate
single crystal semiconductor devices on the back-end of functional device layers within a …

Nanowire Field-Effect Transistors

D Sarkar, IS Esqueda, R Kapadia - … Nanoelectronics: Post‐Silicon …, 2018 - books.google.com
In the planar MOSFET device (Figure 2.1 a), as the channel length is reduced keeping any
other design parameter constant, the depletion regions at the source/drain and channel …