Thermally assisted MRAM
IL Prejbeanu, M Kerekes, RC Sousa… - Journal of Physics …, 2007 - iopscience.iop.org
Magnetic random access memories (MRAMs) are a new non-volatile memory technology
trying establish itself as a mainstream technology. MRAM cell operation using a thermally …
trying establish itself as a mainstream technology. MRAM cell operation using a thermally …
Memory technology—a primer for material scientists
From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …
focused on basic material research and their counterparts in a close-to-application …
[图书][B] Handbook of nanoscience, engineering, and technology
Nanotechnology, science, and engineering spearhead the 21st century revolution that is
leading to fundamental breakthroughs in the way materials, devices, and systems are …
leading to fundamental breakthroughs in the way materials, devices, and systems are …
[PDF][PDF] Ordered magnetic nanostructures: fabrication and properties
The fabrication methods and physical properties of ordered magnetic nanostructures with
dimensions on the submicron to nanometer scale are reviewed. First, various types of …
dimensions on the submicron to nanometer scale are reviewed. First, various types of …
Magnetoresistive random access memory using magnetic tunnel junctions
S Tehrani, JM Slaughter, M Deherrera… - Proceedings of the …, 2003 - ieeexplore.ieee.org
Magnetoresistive random access memory (MRAM) technology combines a spintronic device
with standard silicon-based microelectronics to obtain a combination of attributes not found …
with standard silicon-based microelectronics to obtain a combination of attributes not found …
Progress and outlook for MRAM technology
S Tehrani, JM Slaughter, E Chen… - IEEE Transactions …, 1999 - ieeexplore.ieee.org
We summarize the features of existing semiconductor memories and compare them to
Magnetoresistive Random Access Memory (MRAM), a semiconductor memory with …
Magnetoresistive Random Access Memory (MRAM), a semiconductor memory with …
Ultrahigh density vertical magnetoresistive random access memory
JG Zhu, Y Zheng, GA Prinz - Journal of Applied Physics, 2000 - pubs.aip.org
In this paper, we present the vertical magnetoresistive random access memory (VMRAM)
design based on micromagnetic simulation analysis. The design utilizes the vertical giant …
design based on micromagnetic simulation analysis. The design utilizes the vertical giant …
Magnetization reversal due to vortex nucleation, displacement, and annihilation in submicron ferromagnetic dot arrays
Magnetization processes are analytically described for the arrays of soft ferromagnetic
polycrystalline circular dots with submicron dimensions, wherein the magnetization reversal …
polycrystalline circular dots with submicron dimensions, wherein the magnetization reversal …
Oxides, oxides, and more oxides: high-κ oxides, ferroelectrics, ferromagnetics, and multiferroics
N Izyumskaya, Y Alivov, H Morkoç - Critical Reviews in Solid State …, 2009 - Taylor & Francis
We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …
Magnetocardiography and magnetoencephalography measurements at room temperature using tunnel magneto-resistance sensors
K Fujiwara, M Oogane, A Kanno, M Imada… - Applied Physics …, 2018 - iopscience.iop.org
Magnetocardiography (MCG) and magnetoencephalography (MEG) signals were detected
at room temperature using tunnel magneto-resistance (TMR) sensors. TMR sensors …
at room temperature using tunnel magneto-resistance (TMR) sensors. TMR sensors …