Thermally assisted MRAM

IL Prejbeanu, M Kerekes, RC Sousa… - Journal of Physics …, 2007 - iopscience.iop.org
Magnetic random access memories (MRAMs) are a new non-volatile memory technology
trying establish itself as a mainstream technology. MRAM cell operation using a thermally …

Memory technology—a primer for material scientists

T Schenk, M Pešić, S Slesazeck… - Reports on Progress …, 2020 - iopscience.iop.org
From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …

[图书][B] Handbook of nanoscience, engineering, and technology

WA Goddard III, D Brenner, SE Lyshevski, GJ Iafrate - 2002 - taylorfrancis.com
Nanotechnology, science, and engineering spearhead the 21st century revolution that is
leading to fundamental breakthroughs in the way materials, devices, and systems are …

[PDF][PDF] Ordered magnetic nanostructures: fabrication and properties

JI Martin, J Nogues, K Liu, JL Vicent… - Journal of magnetism …, 2003 - academia.edu
The fabrication methods and physical properties of ordered magnetic nanostructures with
dimensions on the submicron to nanometer scale are reviewed. First, various types of …

Magnetoresistive random access memory using magnetic tunnel junctions

S Tehrani, JM Slaughter, M Deherrera… - Proceedings of the …, 2003 - ieeexplore.ieee.org
Magnetoresistive random access memory (MRAM) technology combines a spintronic device
with standard silicon-based microelectronics to obtain a combination of attributes not found …

Progress and outlook for MRAM technology

S Tehrani, JM Slaughter, E Chen… - IEEE Transactions …, 1999 - ieeexplore.ieee.org
We summarize the features of existing semiconductor memories and compare them to
Magnetoresistive Random Access Memory (MRAM), a semiconductor memory with …

Ultrahigh density vertical magnetoresistive random access memory

JG Zhu, Y Zheng, GA Prinz - Journal of Applied Physics, 2000 - pubs.aip.org
In this paper, we present the vertical magnetoresistive random access memory (VMRAM)
design based on micromagnetic simulation analysis. The design utilizes the vertical giant …

Magnetization reversal due to vortex nucleation, displacement, and annihilation in submicron ferromagnetic dot arrays

KY Guslienko, V Novosad, Y Otani, H Shima… - Physical Review B, 2001 - APS
Magnetization processes are analytically described for the arrays of soft ferromagnetic
polycrystalline circular dots with submicron dimensions, wherein the magnetization reversal …

Oxides, oxides, and more oxides: high-κ oxides, ferroelectrics, ferromagnetics, and multiferroics

N Izyumskaya, Y Alivov, H Morkoç - Critical Reviews in Solid State …, 2009 - Taylor & Francis
We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …

Magnetocardiography and magnetoencephalography measurements at room temperature using tunnel magneto-resistance sensors

K Fujiwara, M Oogane, A Kanno, M Imada… - Applied Physics …, 2018 - iopscience.iop.org
Magnetocardiography (MCG) and magnetoencephalography (MEG) signals were detected
at room temperature using tunnel magneto-resistance (TMR) sensors. TMR sensors …