Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching
Periodic high aspect ratio GaAs nanopillars with widths in the range of 500–1000 nm are
produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates …
produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates …
Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold
E Dimopoulos, A Sakanas… - Laser & Photonics …, 2022 - Wiley Online Library
Light sources with ultra‐low energy consumption and high performance are required to
realize optical interconnects for on‐chip communication. Photonic crystal (PhC) nanocavity …
realize optical interconnects for on‐chip communication. Photonic crystal (PhC) nanocavity …
[图书][B] III-V integrated circuit fabrication technology
S Tiku, D Biswas - 2016 - books.google.com
GaAs processing has reached a mature stage. New semiconductor compounds are
emerging that will dominate future materials and device research, although the processing …
emerging that will dominate future materials and device research, although the processing …
High Q factor InP photonic crystal nanobeam cavities on silicon wire waveguides
High-quality (Q) factor indium phosphide (InP)-based 1D photonic crystal nanobeam cavities
are fabricated on silicon on insulator waveguides. Through the optimization of the fabrication …
are fabricated on silicon on insulator waveguides. Through the optimization of the fabrication …
Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires
The spontaneous emission rate and Purcell factor of self-assembled quantum wires
embedded in photonic crystal micro-cavities are measured at 80 K by using micro …
embedded in photonic crystal micro-cavities are measured at 80 K by using micro …
Room temperature continuous wave operation in a photonic crystal microcavity laser with a single layer of InAs/InP self-assembled quantum wires
We present continuous wave laser emission in a photonic crystal microcavity operating at
1.5 µ m at room temperature. The structures have been fabricated in an InP slab including a …
1.5 µ m at room temperature. The structures have been fabricated in an InP slab including a …
Metal assisted chemical etching to produce III-V semiconductor nanostructures
Methods of metal assisted chemical etching III-V semicon ductors are provided. The
methods can include providing an electrically conductive film pattern disposed on a semicon …
methods can include providing an electrically conductive film pattern disposed on a semicon …
Two-dimensional surface emitting photonic crystal laser with hybrid triangular-graphite structure
We present laser emission of a compact surface-emitting micro laser, optical pumped and
operating at 1.5 µ m at room temperature. A two-dimensional photonic crystal lattice …
operating at 1.5 µ m at room temperature. A two-dimensional photonic crystal lattice …
Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching
IP González, LE Muñoz Camuñez… - Journal of Vacuum …, 2014 - pubs.aip.org
The authors demonstrate high quality factor GaAs-based L9 photonic crystal microcavities
(PCMs) with embedded InAsSb quantum dots with emission in 1.3 μm at room temperature …
(PCMs) with embedded InAsSb quantum dots with emission in 1.3 μm at room temperature …
Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires
The Purcell effect dependence on the excitation power is studied in photonic crystal
microcavity lasers embedding InAs/InP quantum wires. In the case of non-lasing modes, the …
microcavity lasers embedding InAs/InP quantum wires. In the case of non-lasing modes, the …