Experimental data on indium incorporation in InGaN and InAlN layers grown by
metalorganic chemical vapor epitaxy (MOVPE) on bulk GaN substrates are presented and …

We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra
fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local …

We demonstrate the operation of high-power InGaN laser diode" mini-arrays" consisting of
three or five stripes in a common p-contact configuration and compare the results with a …

Understanding the relation between surface morphology during epitaxy of GaN: Si and its
electrical properties is important from both the fundamental and application perspectives …

A patterned GaN/sapphire template with separate regions angled between 0.4 and 2 to the
wurtzite c-plane was used to grow a 50 nm In 0.1 Ga 0.9 N layer. The photoluminescence …

In the case of InGaN alloys grown by metalorganic vapour phase epitaxy on ac‐plane GaN,
indium content decreases as the substrate miscut is increased. This phenomenon has been …

Systematic studies of In x Ga 1− x N layers (0≤ x< 0.13) doped with Mg were performed.
Samples were grown by metal organic vapor phase epitaxy. Intermediate Mg doping in the …

To planarize semiconductor materials such as gallium nitride (GaN) and silicon carbide with
high efficiency, we developed a polarization method that combines ultraviolet irradiation and …

We have determined thermal stability of various InGaN laser diodes emitting in the spectral
range of 390-436 nm. Their characteristic temperature T 0 increases steeply with the …

Abstract Nitrogen-polar (N-polar) InGaN films were grown on a GaN template/c-plane
sapphire substrate by metal–organic vapor phase epitaxy (MOVPE). The effects of c-plane …