Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …

We overview recent progress in growth aspects of group III-nitride heterostructures for deep
ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth …

Compact solid-state deep-ultraviolet (DUV) light-emitting diodes (LEDs) go far beyond
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …

The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …

The reliability and output power of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-
LEDs) fabricated on AlN substrates prepared by hydride vapor phase epitaxy are reported …

In this paper we will describe the approaches that we have used to grow AlGaN‐based
multiple quantum well deep UV LED structures and to overcome issues of doping efficiency …

This critical review analyzes and compares the efficiency of select technologies that harness
solar energy for point-of-use water disinfection, including photocatalysts, photosensitizing …

We present a study of reliability of AlGaN-based 280 nm deep ultraviolet light-emitting
diodes on sapphire substrate grown by migration-enhanced metal-organic chemical vapor …

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV)
light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open …

Lateral-conduction, substrate-free flip-chip (SFFC) light-emitting diodes (LEDs) with peak
emission at 276 nm are demonstrated for the first time. The AlGaN multiple quantum well …