Heteroepitaxial growth of III-V semiconductors on silicon
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
Atomic layer epitaxy
T Suntola - Materials Science Reports, 1989 - Elsevier
This review discusses the development and present status of atomic layer epitaxy (ALE), a
technology for growing layers of crystalline and polycrystalline materials one atomic layer at …
technology for growing layers of crystalline and polycrystalline materials one atomic layer at …
[图书][B] Epitaxy of semiconductors
UW Pohl - 2020 - Springer
This introductory chapter provides a brief survey on the development of epitaxial growth
techniques and points out tasks for the epitaxy of device structures. Starting from early …
techniques and points out tasks for the epitaxy of device structures. Starting from early …
Fabrication of GaAs quantum dots by modified droplet epitaxy
K Watanabe, N Koguchi, Y Gotoh - Japanese Journal of Applied …, 2000 - iopscience.iop.org
We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs
quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our …
quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our …
[图书][B] Epitaxy of nanostructures
The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …
The size of key elements in modern devices approaches the nanometer scale, for both …
Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy
CM Brooks, L Kourkoutis, T Heeg, J Schubert… - Applied physics …, 2009 - pubs.aip.org
We report the structural properties of homoepitaxial (100) SrTiO 3 films grown by reactive
molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking …
molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking …
Growth of GaAs epitaxial microcrystals on an S-terminated GaAs substrate by successive irradiation of Ga and As molecular beams
NKN Koguchi, KIK Ishige - Japanese journal of applied physics, 1993 - iopscience.iop.org
Numerous GaAs epitaxial microcrystals with an average base size of 250 Å× 430 Å with
(111) facets were fabricated on a sulfur-terminated (S-terminated) GaAs (001) substrate with …
(111) facets were fabricated on a sulfur-terminated (S-terminated) GaAs (001) substrate with …
RHEED Intensity Oscillations for the Stoichiometric Growth of SrTiO3 Thin Films by Reactive Molecular Beam Epitaxy
JH Haeni, CD Theis, DG Schlom - Journal of Electroceramics, 2000 - Springer
The growth of high quality multicomponent oxide thin films by reactive molecular beam
epitaxy (MBE) requires precise composition control. We report the use of in situ reflection …
epitaxy (MBE) requires precise composition control. We report the use of in situ reflection …
Oxide nano-engineering using MBE
DG Schlom, JH Haeni, J Lettieri, CD Theis… - Materials Science and …, 2001 - Elsevier
Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of
semiconductors at the nanometer level; its use for the integration of oxides with similar …
semiconductors at the nanometer level; its use for the integration of oxides with similar …
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
A Fissel - Physics reports, 2003 - Elsevier
In recent years, new types of semiconductor heterostructures consisting of only one material
in different crystal structures, such as wurtzite/zinc-blende heterostructures (heteropolytypic …
in different crystal structures, such as wurtzite/zinc-blende heterostructures (heteropolytypic …