Gallium nitride (GaN) has superior physical properties suitable for the realization of power
switching and high-frequency transistors with better performances than of conventional Si …

We report a comparative study of the isolation mechanisms of two-dimensional electron gas
(2-DEG) in Al 0.2 Ga 0.8 N/GaN heterostructure by room temperature ion implantation with …

AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and
thermal properties. In this study, we examined the electrical performance of AlGaN/GaN …

High thermal conductivity is an important parameter for nitride-based power electronic and
deep-UV light emitters. Especially in the latter case short period superlattices and …

This work presents an experimental analysis of Metal-Insulator-Semiconductor High
Electron Mobility transistor (MISHEMT) operating in a temperature range from 450 K down to …

In this work, the DC behavior of AlGaN/GaN Metal-Insulator-Semiconductor high electron
mobility transistors (MO (I) SHEMTs) with two different gate dielectrics (Al 2 O 3 and Si 3 N 4) …

Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior
electrical and material properties that make them ideal for the fabrication of high …

This letter demonstrates a novel HEMT controlled ultraviolet light emitter by directly
modifying the drain of AlGaN/GaN HEMTs. The selective epitaxial growth (SEG) p-GaN on …

In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT)
with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin …

This paper presents a review of the recent advances of GaN based nanowires sensors. GaN
has gained substantial interest in the research area of wide band gap semiconductors due …