A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
[HTML][HTML] Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Record-high electron mobilities were achieved for silicon-doped (010) β-Ga 2 O 3
homoepitaxial films grown via metalorganic chemical vapor deposition (MOCVD). Key …
homoepitaxial films grown via metalorganic chemical vapor deposition (MOCVD). Key …
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
K Konishi, K Goto, H Murakami, Y Kumagai… - Applied Physics …, 2017 - pubs.aip.org
Ga 2 O 3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …
Intrinsic electron mobility limits in β-Ga2O3
By systematically comparing experimental and theoretical transport properties, we identify
the polar optical phonon scattering as the dominant mechanism limiting electron mobility in …
the polar optical phonon scattering as the dominant mechanism limiting electron mobility in …
[HTML][HTML] Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
Modulation-doped heterostructures are a key enabler for realizing high mobility and better
scaling properties for high performance transistors. We report the realization of a modulation …
scaling properties for high performance transistors. We report the realization of a modulation …
[HTML][HTML] On the feasibility of p-type Ga2O3
We investigate the various cation substitutional dopants in Ga 2 O 3 for the possibility of p–
type conductivity using density functional theory. Our calculations include both standard …
type conductivity using density functional theory. Our calculations include both standard …
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers …
M Higashiwaki, K Konishi, K Sasaki, K Goto… - Applied Physics …, 2016 - pubs.aip.org
We investigated the temperature-dependent electrical properties of Pt/Ga 2 O 3 Schottky
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2 …
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2 …
Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
H Murakami, K Nomura, K Goto, K Sasaki… - Applied Physics …, 2014 - iopscience.iop.org
Thick high-purity β-Ga 2 O 3 layers of high crystalline quality were grown homoepitaxially by
halide vapor phase epitaxy (HVPE) using gaseous GaCl and O 2 on (001) β-Ga 2 O 3 …
halide vapor phase epitaxy (HVPE) using gaseous GaCl and O 2 on (001) β-Ga 2 O 3 …