The kinetics and the mechanism of oxidation of ceramics based on HfB 2 and SiC,
manufactured by elemental self-propagating high-temperature synthesis followed by hot …

Despite being a member of the zircon-type silicate family, the conditions allowing the
hydrothermal synthesis of HfSiO4 are not well constrained. A multiparametric study was …

We have studied the thermal atomic layer deposition (ALD) of HfO2 on native and chemical
oxide GaAs (100) surfaces using the amide precursors tetrakis ethylmethyl amino hafnium …

We report on ion-induced phase transformations, defect dynamics related to oxygen
vacancies and the resulting leakage current characteristics of RF sputtered HfO 2 thin films …

In this paper, the effect in structural and magnetic properties of iron doping with
concentration of 20% in hafnium dioxide (HfO 2) nanoparticles is investigated. HfO 2 is a …

The electronic structure of pure and Ta-doped ZrSi O 4 in the tetragonal I 4 1/amd phase
with and without defects has been studied using the ab initio full-potential linear augmented …

Ultrathin high-k dielectric ErAlO films were deposited on Si (100) substrates by using radio-
frequency magnetron sputtering. The very flat surface of the annealed film with a rms …

The ionic exchange of Hf and Ho atoms in the HfO 2/Ho 2 O 3 system was studied at the
atomic level applying the nuclear solid-state Time-Differential γ–γ Perturbed-Angular …

As HfO2 appears as a good candidate to replace SiO2 in Si complementary metal-oxide-
semiconductor devices, a refined knowledge of the possible solid-state reactions between Si …

We have studied the thermal atomic layer deposition (ALD) of HfO₂ on native and chemical
oxide GaAs (100) surfaces using the amide precursors tetrakis ethylmethyl amino hafnium …