InAs/GaSb Type‐II Superlattice Detectors
EA Plis - Advances in Electronics, 2014 - Wiley Online Library
InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …
since they were first proposed as an infrared (IR) sensing material more than three decades …
Passivation techniques for InAs/GaSb strained layer superlattice detectors
Abstract InAs/(In, Ga) Sb Strained Layer Superlattices (SLSs) have made significant
progress since they were first proposed as an infrared (IR) sensing material more than three …
progress since they were first proposed as an infrared (IR) sensing material more than three …
Mid-IR focal plane array based on type-II InAs∕ GaSb strain layer superlattice detector with nBn design
A midwave infrared camera (λ c= 4.2 μ m) with a 320× 256 focal plane array (FPA) based on
type-II In As∕ Ga Sb strain layer superlattice (SLs) has been demonstrated. The detectors …
type-II In As∕ Ga Sb strain layer superlattice (SLs) has been demonstrated. The detectors …
Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes
R Chaghi, C Cervera, H Aït-Kaci, P Grech… - Semiconductor …, 2009 - iopscience.iop.org
In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice
mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used …
mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used …
Reduction of surface leakage current of InAs/GaSb long-wavelength superlattice detectors using SiO2 and anodic sulfide composite passivation
X Wang, J Li, Y Yan, C You, J Li, T Wen, M Liu… - Materials Science in …, 2023 - Elsevier
We investigate two passivation methods for long-wavelength infrared type-II InAs/GaSb
superlattice (T2SL) photodiodes with the PπBN structure containing an InAs/AlSb hole …
superlattice (T2SL) photodiodes with the PπBN structure containing an InAs/AlSb hole …
Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation
We report on SU-8 passivation for performance improvement of type-II InAs/GaSb strained
layer superlattice detectors (λ cut-off∼ 4.6 μ m). Optical and electrical behavior of SU-8 …
layer superlattice detectors (λ cut-off∼ 4.6 μ m). Optical and electrical behavior of SU-8 …
Non-volatile memory behavior of interfacial InOx layer in InAs nano-wire field-effect transistor for neuromorphic application
Abstract Nano-wire (NW) field-effect transistor (FET) is expected to be a promising device in
the semiconductor industry owing to its scalability and enhanced gate-controllability …
the semiconductor industry owing to its scalability and enhanced gate-controllability …
Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors
Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD)
aluminum oxide (Al 2 O 3) was used as a novel approach for passivation of type II …
aluminum oxide (Al 2 O 3) was used as a novel approach for passivation of type II …
nBn detectors based on InAs∕ GaSb type-II strain layer superlattice
We report on a type-II In As∕ Ga Sb strain layer superlattice photodetector using a nBn
design with cutoff wavelength of∼ 4.8 μ m at 250 K. The surface component of dark current …
design with cutoff wavelength of∼ 4.8 μ m at 250 K. The surface component of dark current …
Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application
An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) 320× 256 unipolar
focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to …
focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to …