Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Hydrogenated amorphous carbon (aC: H) films are prepared using a bipolar-type plasma-
based ion implantation and deposition system, followed by thermal annealing of the films at …

Plasma-based technology is effective in improving the performance of titanium and
magnesium-based biomaterials with regard to bacteria prevention and osteogenetic …

We present an experimental study of structural lattice damage in Ge induced by ion
implantation. From the strain and disorder profiles, calculated from x-ray diffraction and ion …

During the last decade, considerable progress has been made in understanding the
properties and behavior of the vacancy V and self-interstitial I in silicon (Si) and germanium …

Highly n-type Ge attained by shallow As implantation and excimer laser annealing was
studied with positron annihilation spectroscopy and theoretical calculations. We conclude …

Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation
annealing, and their role in shallow junction formation processes in Si and Ge are reviewed …

Slow positron beam and optical absorption measurements are carried out to study structural
defects and positronium formation in 40 keV B+-implanted polymethylmethacrylate (B …

Positron annihilation spectroscopy was performed to study defects in Ge doped with As, P
and Sb. In each case, the samples had approximately the same dopant concentration∼ 10 …