The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …

Publisher Summary This chapter provides an overview of type-II superlattice infrared
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …

The electronic band structures and optical properties of type-II superlattice (T2SL)
photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band …

We reported on the material and device characterization of a dual-band unipolar barrier
infrared photodetector with n-In 0.28 Ga 0.72 As 0.25 Sb 0.75 bulk and InAs/GaSb type-II …

Abstract Strain balanced InAs/GaSb type-II superlattice structures have been grown using
molecular beam epitaxy. InSb like interfaces have been introduced at both InAs on GaSb …

We report on the epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-ІІ
superlattices (T2SLs) on GaSb substrates by metalorganic chemical vapor deposition. For …

The development of type-II InAs/GaSb superlattice (SL) detectors with nBn and pin designs
for the long-wave infrared (LWIR) spectral region is discussed. The dependence of dark …

This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by
molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain …

This work reports on the impact of defects on the parameters of type II InAs/GaSb
superlattices (SLs) and photoconductors (PCs) from the very long wavelength infrared …

We demonstrate high-performance mid-wavelength pin infrared detectors based on
InAs/GaSb type-II superlattices (SLs) grown by a production-scale metalorganic chemical …