ZnO-based ultraviolet photodetectors
Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a
wide range of civil and military applications. Because of its wide band gap, low cost, strong …
wide range of civil and military applications. Because of its wide band gap, low cost, strong …
[图书][B] Integrated optics
RG Hunsperger - 1995 - Springer
The transmission and processing of signals carried by optical beams rather than by
electrical currents or radio waves has been a topic of great interest ever since the early …
electrical currents or radio waves has been a topic of great interest ever since the early …
Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
JK Sheu, YK Su, GC Chi, MJ Jou, CM Chang - Applied physics letters, 1998 - pubs.aip.org
In this work indium tin oxide (ITO) films were prepared using electron beam evaporation to
form Schottky contacts on n-type GaN films. The thermal stability of ITO on n-type GaN was …
form Schottky contacts on n-type GaN films. The thermal stability of ITO on n-type GaN was …
Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate
F Xie, H Lu, X Xiu, D Chen, P Han, R Zhang… - Solid-state electronics, 2011 - Elsevier
Metal-semiconductor–metal ultraviolet photodetectors are fabricated on low-defect-density
homoepitaxial GaN layer on bulk GaN substrate. The dislocation density of the …
homoepitaxial GaN layer on bulk GaN substrate. The dislocation density of the …
Properties of RF magnetron sputtered cadmium–tin–oxide and indium–tin–oxide thin films
W Wohlmuth, I Adesida - Thin Solid Films, 2005 - Elsevier
The electrical, optical, structural, chemical, and etch properties of rf magnetron, sputter-
deposited thin films of indium–tin–oxide (ITO) and cadmium–tin–oxide (CTO) are presented …
deposited thin films of indium–tin–oxide (ITO) and cadmium–tin–oxide (CTO) are presented …
[HTML][HTML] Mid-wavelength infrared photo response and band alignment for sensitized PbSe thin films
PbSe thin films were deposited using the chemical bath deposition method and sensitized
with iodine for enhanced IR photoconductivity. After sensitization, PbSe films showed a high …
with iodine for enhanced IR photoconductivity. After sensitization, PbSe films showed a high …
高增益ZnO 肖特基紫外光电探测器光响应特性
段雨晗， 蒋大勇， 赵曼 - 发光学报, 2023 - cjl.lightpublishing.cn
ZnO 宽禁带半导体紫外光电探测器具有稳定性高, 成本低等诸多优势, 在国防, 医疗,
环境监测等领域具有重要的应用前景. 本文采用射频磁控技术在SiO 2 衬底上制备了ZnO 薄膜 …
环境监测等领域具有重要的应用前景. 本文采用射频磁控技术在SiO 2 衬底上制备了ZnO 薄膜 …
Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy
W Gao, PR Berger, RG Hunsperger, G Zydzik… - Applied physics …, 1995 - pubs.aip.org
The Schottky barrier height was measured for five different materials on undoped In0. 52Al0.
48As grown by molecular beam epitaxy (MBE). Of the materials tested, two were transparent …
48As grown by molecular beam epitaxy (MBE). Of the materials tested, two were transparent …
Demonstration of a large-area AlGaN/GaN Schottky barrier photodetector on Si with high detection limit
M Kumar, CY Lee, H Sekiguchi, H Okada… - Semiconductor …, 2013 - iopscience.iop.org
A high-quality AlGaN/GaN Schottky barrier photodetector was demonstrated on Si. The
device exhibited a very low dark current of 0.94 fA at− 2.5 V and 2.51 pA at− 10 V. There …
device exhibited a very low dark current of 0.94 fA at− 2.5 V and 2.51 pA at− 10 V. There …
Metal-semiconductor-metal photodetectors
PR Berger - Testing, Reliability, and Applications of …, 2001 - spiedigitallibrary.org
MSM photodiodes attracted attention due to their high-speed performance and ease of
integration, but this interest has waned recently. This paper endeavors to explore why this …
integration, but this interest has waned recently. This paper endeavors to explore why this …