ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing
Extremely low energy consumption neuromorphic computing is required to achieve
massively parallel information processing on par with the human brain. To achieve this goal …
massively parallel information processing on par with the human brain. To achieve this goal …
Cross-point memory array without cell selectors—Device characteristics and data storage pattern dependencies
Cross-point memory architecture offers high device density, yet it suffers from substantial
sneak path leakages, which result in large power dissipation and a small sensing margin …
sneak path leakages, which result in large power dissipation and a small sensing margin …
Very low-programming-current RRAM with self-rectifying characteristics
To resolve the sneak leakage problem and reduce the power consumption in crossbar
RRAM arrays, a Cu/Al 2 O 3/aSi/Ta cell with self-rectifying characteristics is developed. The …
RRAM arrays, a Cu/Al 2 O 3/aSi/Ta cell with self-rectifying characteristics is developed. The …
Conductive Filament Scaling of Bipolar ReRAM for Improving Data Retention Under Low Operation Current
T Ninomiya, Z Wei, S Muraoka… - … on Electron Devices, 2013 - ieeexplore.ieee.org
The retention model of a bipolar ReRAM considering the percolative paths in a conductive
filament is proposed. We demonstrate, for the first time, that the control of oxygen vacancy …
filament is proposed. We demonstrate, for the first time, that the control of oxygen vacancy …
Punchthrough-diode-based bipolar RRAM selector by Si epitaxy
VSS Srinivasan, S Chopra, P Karkare… - IEEE Electron …, 2012 - ieeexplore.ieee.org
We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector
application. Epitaxial Si: C process is used to deposit n^+/p/n^+ layers which are fabricated …
application. Epitaxial Si: C process is used to deposit n^+/p/n^+ layers which are fabricated …
Metal oxide resistive switching memory
Electrically triggered resistance switching phenomenon in metal oxide was extensively
explored for the promising potential as an emerging nonvolatile memory. Prototype chips of …
explored for the promising potential as an emerging nonvolatile memory. Prototype chips of …
Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability
YS Fan, PT Liu, CH Hsu - Thin Solid Films, 2013 - Elsevier
Recently, non-volatile memory (NVM) has been widely used in electronic devices.
Nowadays, the prevailing NVM is Flash memory. However, it is generally believed that the …
Nowadays, the prevailing NVM is Flash memory. However, it is generally believed that the …
Ultralow sub-1-nA operating current resistive memory with intrinsic non-linear characteristics
Sub-1-nA operating current conductive-bridge resistive memory devices showing
pronounced rectifying behavior have been demonstrated in a cell structure consisting of Cu …
pronounced rectifying behavior have been demonstrated in a cell structure consisting of Cu …
Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VOx)/Pt Device through Two-Step Resistance Change by …
Forming-free, low-voltage, and high-speed resistive switching is demonstrated in an
Ag/oxygen-deficient vanadium oxide (VO x)/Pt device via the facilitated formation and …
Ag/oxygen-deficient vanadium oxide (VO x)/Pt device via the facilitated formation and …