ReRAM: History, status, and future

Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …

Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing

H Tian, L Zhao, X Wang, YW Yeh, N Yao, BP Rand… - Acs Nano, 2017 - ACS Publications
Extremely low energy consumption neuromorphic computing is required to achieve
massively parallel information processing on par with the human brain. To achieve this goal …

Cross-point memory array without cell selectors—Device characteristics and data storage pattern dependencies

J Liang, HSP Wong - IEEE Transactions on Electron Devices, 2010 - ieeexplore.ieee.org
Cross-point memory architecture offers high device density, yet it suffers from substantial
sneak path leakages, which result in large power dissipation and a small sensing margin …

Very low-programming-current RRAM with self-rectifying characteristics

J Zhou, F Cai, Q Wang, B Chen… - IEEE Electron Device …, 2016 - ieeexplore.ieee.org
To resolve the sneak leakage problem and reduce the power consumption in crossbar
RRAM arrays, a Cu/Al 2 O 3/aSi/Ta cell with self-rectifying characteristics is developed. The …

Conductive Filament Scaling of Bipolar ReRAM for Improving Data Retention Under Low Operation Current

T Ninomiya, Z Wei, S Muraoka… - … on Electron Devices, 2013 - ieeexplore.ieee.org
The retention model of a bipolar ReRAM considering the percolative paths in a conductive
filament is proposed. We demonstrate, for the first time, that the control of oxygen vacancy …

Punchthrough-diode-based bipolar RRAM selector by Si epitaxy

VSS Srinivasan, S Chopra, P Karkare… - IEEE Electron …, 2012 - ieeexplore.ieee.org
We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector
application. Epitaxial Si: C process is used to deposit n^+/p/n^+ layers which are fabricated …

Metal oxide resistive switching memory

S Yu, B Lee, HSP Wong - Functional Metal Oxide Nanostructures, 2011 - Springer
Electrically triggered resistance switching phenomenon in metal oxide was extensively
explored for the promising potential as an emerging nonvolatile memory. Prototype chips of …

Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

YS Fan, PT Liu, CH Hsu - Thin Solid Films, 2013 - Elsevier
Recently, non-volatile memory (NVM) has been widely used in electronic devices.
Nowadays, the prevailing NVM is Flash memory. However, it is generally believed that the …

Ultralow sub-1-nA operating current resistive memory with intrinsic non-linear characteristics

S Gaba, F Cai, J Zhou, WD Lu - IEEE Electron Device Letters, 2014 - ieeexplore.ieee.org
Sub-1-nA operating current conductive-bridge resistive memory devices showing
pronounced rectifying behavior have been demonstrated in a cell structure consisting of Cu …

Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VOx)/Pt Device through Two-Step Resistance Change by …

J Ryu, K Park, DP Sahu, TS Yoon - ACS Applied Materials & …, 2024 - ACS Publications
Forming-free, low-voltage, and high-speed resistive switching is demonstrated in an
Ag/oxygen-deficient vanadium oxide (VO x)/Pt device via the facilitated formation and …