Graphene exhibits superior mechanical strength, high thermal conductivity, strong light–
matter interactions, and, in particular, exceptional electronic properties. These merits make …

We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

In spite of the great expectations for epitaxial graphene (EG) on silicon carbide (SiC) to be
used as a next-generation high-performance component in high-power nano-and micro …

The plasmonic cerium vanadate (CeVO4) semiconductor and plasmonic silver (Ag) metal
exhibit a localized surface plasmon resonance (LSPR) effect in the visible (Vis)-light region; …

Precision of scanning tunneling microscopy (STM) enables control of matter at scales of
single atoms. However, transition from atomic-scale manipulation strategies to practical …

The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band
gap, of which the precise origin remains to be understood. In this work, we correlate the …

Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic
applications. One advantage of EG growth on the Si face of SiC is that it develops as a …

Using highly controlled coverages of graphene on SiC (0001), we have studied the structure
of the first graphene layer that grows on the SiC interface. This layer, known as the buffer …

Tuning interactions between Dirac states in graphene has attracted enormous interest
because it can modify the electronic spectrum of the 2D material, enhance electron …

We report the use of a surfactant molecule during the epitaxy of graphene on SiC (0001) that
leads to the growth in an unconventional orientation, namely R 0° rotation with respect to the …