Persistent Photoconductivity Control in Zn-Doped SnO2 Thin Films for the Performance Enhancement of Solar-Blind Ultraviolet Photodetectors

WJ Lee, SS Lee, SH Sohn, Y Choi, IK Park - Acs Photonics, 2023 - ACS Publications
SnO2 has received much attention as one of the transparent oxide semiconductors, which
can be used in various applications, such as photocatalysts, chemical sensors, and …

Strain-Induced Modulation of Resistive Switching Temperature in Epitaxial VO2 Thin Films on Flexible Synthetic Mica

Y Arata, H Nishinaka, M Takeda, K Kanegae… - ACS …, 2022 - ACS Publications
The resistive switching temperature associated with the metal–insulator transition (MIT) of
epitaxial VO2 thin films grown on flexible synthetic mica was modulated by bending stress …

Enhanced infrared transmittance by modulation of electrical and optical properties of Sm-doped SnO2 thin films

SS Lee, WJ Lee, Y Choi, IK Park - Applied Surface Science, 2023 - Elsevier
Although metal oxides exhibit high electrical conductivity and high transparency in the
visible wavelength range, they suffer from low transmittance in the infrared (IR) spectral …

Epitaxial growth of cobalt oxide thin films on sapphire substrates using atmospheric pressure mist chemical vapor deposition

HG Chen, HS Wang, SR Jian, TL Yeh, JY Feng - Coatings, 2023 - mdpi.com
This study demonstrated the epitaxial growth of single-phase (111) CoO and (111) Co3O4
thin films on a-plane sapphire substrates using an atmospheric pressure mist chemical …

High-performance zinc tin oxide semiconductor grown by atmospheric-pressure mist-CVD and the associated thin-film transistor properties

J Park, KT Oh, DH Kim, HJ Jeong, YC Park… - … Applied Materials & …, 2017 - ACS Publications
Zinc tin oxide (Zn–Sn–O, or ZTO) semiconductor layers were synthesized based on solution
processes, of which one type involves the conventional spin coating method and the other is …

GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique

RS Low, JT Asubar, A Baratov, S Kamiya… - Applied Physics …, 2021 - iopscience.iop.org
We report on the fabrication and characterization of AlGaN/GaN metal-insulator-
semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a …

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

K Okita, K Inaba, Z Yatabe… - Japanese Journal of …, 2018 - iopscience.iop.org
ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar
ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer …

Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films

Z Yatabe, K Nishiyama, T Tsuda… - Japanese Journal of …, 2019 - iopscience.iop.org
Aluminum titanium oxide (Al 1–x Ti x O y, an alloy of Al 2 O 3 and TiO 2), an attractive high-κ
dielectric material, was synthesized by mist chemical vapor deposition, utilizing Al 2 O 3 and …

Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions

KT Oh, H Kim, D Kim, JH Han, J Park, JS Park - Ceramics International, 2017 - Elsevier
Aluminum oxide (AlO x) thin films were synthesized by mist-chemical vapor deposition (mist-
CVD) using aluminum acetylacetonate (Al (acac) 3) dissolved in an aqueous solvent mixture …

High-mobility rutile SnO2 epitaxial films grown on (1− 100) α-Al2O3

B Chen, J Lin, B Feng, Y Ikuhara… - Journal of the Ceramic …, 2023 - jstage.jst.go.jp
Tin dioxide (SnO2) is an easily synthesized, chemically stable semiconductor.
Commercially, it is the active material for gas sensors due to its exceptional sensing …