Silicon–germanium receivers for short-wave-infrared optoelectronics and communications: High-speed silicon–germanium receivers (invited review)
D Benedikovic, L Virot, G Aubin, JM Hartmann… - …, 2021 - degruyter.com
Integrated silicon nanophotonics has rapidly established itself as intriguing research field,
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …
3D photon-to-digital converter for radiation instrumentation: Motivation and future works
Analog and digital SiPMs have revolutionized the field of radiation instrumentation by
replacing both avalanche photodiodes and photomultiplier tubes in many applications …
replacing both avalanche photodiodes and photomultiplier tubes in many applications …
A review on the recent progress of silicon‐on‐insulator‐based photodetectors
J Liu, S Cristoloveanu, J Wan - physica status solidi (a), 2021 - Wiley Online Library
The family of photodetectors plays an important role in multiple applications. Extensive
research and continuous development of photodetectors has enriched their functionalities …
research and continuous development of photodetectors has enriched their functionalities …
Room-temperature waveguide-coupled silicon single-photon avalanche diodes
Single photon detection is important for a wide range of low-light applications, including
quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A …
quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A …
An Ultra-thin ultraviolet enhanced backside-illuminated single-photon avalanche diode with 650 nm-thin silicon body based on SOI technology
We present the world's thinnest backside illuminated (BSI) single-photon avalanche diode
(SPAD) with a silicon (Si) thickness of 650 nm fabricated in complementary metal-oxide …
(SPAD) with a silicon (Si) thickness of 650 nm fabricated in complementary metal-oxide …
Design and analysis of a photon counting system using covered single-photon avalanche photodiode
S Deng, X Li, A Morrison, M Chen… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
A photon counting system using covered single-photon avalanche diode (SPAD) based on a
standard integrated circuit (IC) process () is designed and analyzed in this work. The SPAD …
standard integrated circuit (IC) process () is designed and analyzed in this work. The SPAD …
A back-illuminated SPAD fabricated with 40 nm CMOS image sensor technology achieving near 40% PDP at 940 nm
This article introduces a back-illuminated (BI) single-photon avalanche diode (SPAD) based
on 40 nm CMOS image sensor (CIS) technology which is the most advanced technology …
on 40 nm CMOS image sensor (CIS) technology which is the most advanced technology …
Back-Illuminated Double-Avalanche-Region Single-Photon Avalanche Diode
E Park, D Eom, MH Yu, YM Moon… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
The key features of a single-photon avalanche diode (SPAD) are its ability to detect a single
photon and provide a digital signal output. The avalanche multiplication process, which …
photon and provide a digital signal output. The avalanche multiplication process, which …
Parametric Research on the Deep-Junction Silicon SPADs for Wide Spectral Response and Low Dark Count Noise
S Li, Y Xu, D Bian, D Liu - IEEE Transactions on Electron …, 2024 - ieeexplore.ieee.org
A wide spectral single-photon avalanche diode (SPAD) with near-infrared (NIR)
photosensitivity enhancement was implemented in 0.18-m bipolar-CMOS-DMOS (BCD) …
photosensitivity enhancement was implemented in 0.18-m bipolar-CMOS-DMOS (BCD) …
Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology
D Liu, M Li, T Xu, J Dong, Y Fang… - Journal of …, 2023 - iopscience.iop.org
The influence of the virtual guard ring width (GRW) on the performance of the p-well/deep n-
well single-photon avalanche diode (SPAD) in a 180 nm standard CMOS process was …
well single-photon avalanche diode (SPAD) in a 180 nm standard CMOS process was …