Trend of using miniaturized sensors in various fields is rapidly growing. Related sensing
surface topology can crucially affect the performance of a sensor by affecting various …

Vapour–liquid–solid route and its variants are routinely used for scalable synthesis of
semiconducting nanowires, yet the fundamental growth processes remain unknown. Here …

Controllable and uniform doping of nanowires (NWs) is the ultimate challenge prior to their
effective application. Si NWs amorphize and bend toward the impinging ions under ion …

Silicon Nanowires prepared by Metal-Assisted Chemical Etching have been nanopatterned
into periodic and aperiodic array geometries displaying functionality at visible wavelengths …

Abstract Nanocolumnar composite Cu–Si films were produced as anodes using an oblique
angle electron beam co-evaporation method. Two evaporation durations were used to yield …

Si and Ge have the same crystalline structure, and although Si-Au and Ge-Au binary alloys
are thermodynamically similar (same phase diagram, with the eutectic temperature of about …

For the first time silicon nanowires have been grown on indium (In) coated Si (100)
substrates using e-beam evaporation at a low substrate temperature of 300° C. Standard …

Abstract The possibility that an adsorbed molecule could provide shallow electronic states
that could be thermally excited has received less attention than substitutional impurities and …

Indium tin oxide (ITO) nanowires were grown at a lower substrate temperature of 400 C via
Au-catalyzed vapor–liquid–solid (VLS) growth mechanism by electron beam evaporation …

We report a very generic methodology to control the crystallographic orientation of GaN
nanowires (NWs) in a chemical vapor deposition technique employing a standard vapor …