A review on SRAM memory design using FinFET technology

TV Lakshmi, M Kamaraju - International Journal of System Dynamics …, 2021 - igi-global.com
An innovative technology named FinFET (Fin Field Effect Transistor) has been developed to
offer better transistor circuit design and to compensate the necessity of superior storage …

An adaptive data coding scheme for energy consumption reduction in SDN-based Internet of Things

S Salehi, H Farbeh, A Rokhsari - Computer Networks, 2023 - Elsevier
In recent decades, most internet-connected devices were personal computers. However,
everything is connecting to the Internet over time. Today, the Internet of Things (IoT) is …

Newly energy-efficient SRAM bit-cell using GAA CNT-GDI method with asymmetrical write and built-in read-assist schemes for QR code-based multimedia …

A Darabi, MR Salehi, E Abiri - Microelectronics Journal, 2021 - Elsevier
The novel design of asymmetric single-ended ten-transistor SRAM bit-cell (SE 10T-SRAM)
using gate-all-around (GAA) carbon nanotube (CNT) FETs-based GAA CNT-GDI method …

Investigation of CNTFET based energy efficient fast SRAM cells for edge AI devices

Y Alekhya, U Nanda - Silicon, 2022 - Springer
A novel reduced power with enhanced speed (RPES) technique for Static Random Access
Memory (SRAM) topologies using Carbon Nano Tube Field Effect Transistors (CNTFETs) …

RETRACTED: A Novel Data Visualization Model Based on Autoencoder Using Big Data Analysis and Distributed Processing Technology

H Feng, G Chen - Scientific Programming, 2022 - Wiley Online Library
From the standpoint of visual elements, this article investigates the use of visual information
technology in visual communication design. At this time, information visualization and data …

Literature review of the SRAM circuit design challenges

I Mahdi, Y Guerbai, Y Meraihi… - Device Circuit Co-Design …, 2023 - taylorfrancis.com
The majority of current embedded systems use microprocessors equipped with volatile
cache memory based on static random access memory (SRAM) technology. As part of a …

[PDF][PDF] A wrap-gate CNT-MOSFET based SRAM bit-cell with asymmetrical ground gating and built-in read-assist schemes for limited-energy environments application

A Darabi, MR Salehi, E Abiri - 2021 - pdfs.semanticscholar.org
Today, designing low-power single-bit SRAM structures with the ability to operate regularly
at low supply voltages and with high immunity against standard radiation particles impact is …

[引用][C] EVALUATION OF THE NANOSCALE TECHNOLOGY USING FINFET BASED SRAM CELL DESIGN

M Gupta, SK Mishra, R Singh - RES MILITARIS, 2023