Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Recent development and advances in Photodetectors based on two-dimensional topological insulators
Photodetectors are optoelectronic devices with excellent photoelectric conversion abilities.
They have especially important applications in many fields, such as image sensing, video …
They have especially important applications in many fields, such as image sensing, video …
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
[PDF][PDF] Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi.
Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …
Hot-wall MOCVD for high-quality homoepitaxy of GaN: understanding nucleation and design of growth strategies
R Delgado Carrascon, S Richter, M Nawaz… - Crystal Growth & …, 2022 - ACS Publications
Thick GaN layers with a low concentration of defects are the key to enable next-generation
vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor …
vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor …
Microwave performance of 'buffer-free'GaN-on-SiC high electron mobility transistors
DY Chen, A Malmros, M Thorsell… - IEEE Electron …, 2020 - ieeexplore.ieee.org
High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure
without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25 μm …
without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25 μm …
[HTML][HTML] Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
D Gogova, M Ghezellou, DQ Tran, S Richter… - AIP Advances, 2022 - pubs.aip.org
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown
to enable superior material quality and high performance devices based on wide bandgap …
to enable superior material quality and high performance devices based on wide bandgap …
[HTML][HTML] Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial
wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice …
wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice …
[HTML][HTML] Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons
Temperature-dependent effective mass in AlGaN/GaN heterostructures was experimentally
observed via THz time domain spectroscopy of 2D plasmons in the range of 80–300 K …
observed via THz time domain spectroscopy of 2D plasmons in the range of 80–300 K …
High-resolution thermoreflectance imaging investigation of self-heating in AlGaN/GaN HEMTs on Si, SiC, and diamond substrates
A El Helou, P Komarov, MJ Tadjer… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-
power operation but suffer in reliability due to potentially damaging self-heating. In this …
power operation but suffer in reliability due to potentially damaging self-heating. In this …