An integrated stereo class-D audio power amplifier realized in a silicon-on-insulator (SOI)-
based BCD technology is presented. The amplifier is capable of delivering 2× 100 W in two …

This paper reviews the BCD technology roadmap and its evolution towards finer lithography
features, wider voltage capability offer and the broadening variety of integrable components …

The hot-carrier degradation behavior of both a lateral and a vertical integrated DMOS
transistor is investigated in detail by the analysis of the electrical data, charge pumping …

The total safe operating area (SOA) of LDMOS transistors is discussed. It is shown that the
transistors are subjected to different kinds of stresses, yielding a combination of electrical …

The surface-potential-based compact transistor model, MOS Model 20 (MM20), has been
extended with a quasi-saturation, an effect that is typical for LDMOS devices with a long drift …

This paper reviews the technology trends of BCD (Bipolar-CMOS-DMOS) technology in
terms of voltage capability, switching speed of power transistor, and high integration of logic …

The articles in this special section focus on computational intelligence for big social data
analytics. In the eras of social connectedness and social colonization, people are becoming …

NXP's family of SOI-based advanced bipolar CMOS DMOS (A-BCD) technologies is
presented. The technology is very successful in automotive, audio and power applications …

In this paper, a surface potential-based compact model is described for high-voltage LDMOS
transistors. This model combines the low-voltage MOS region with the high-voltage drift …

This paper demonstrates an advanced 300mm 130nm BCD (Bipolar-CMOS-DMOS)
automotive grade platform with high modularity. The platform offers logic-devices, flash …