Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance
In this study, Cu/n-Si Schottky diodes with V 2 O 5–Y insulating interface layer were
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS: GO (1: 1) and (ZnCdS: GO (1: 0.5) doped PVP interlayer using current–voltage (I …
In this study, both the Au/(ZnCdS: GO (1: 1) doped PVP)/n-Si and Au/(ZnCdS: GO (1: 0.5)
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti: DLC interlayer
This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky
structure with Ti: DLC interlayer for a wide temperature interval (80–470 K). In the related …
structure with Ti: DLC interlayer for a wide temperature interval (80–470 K). In the related …
Augmented photovoltaic performance of Cu/Ce-(Sn: Cd)/n-Si Schottky barrier diode utilizing dual-doped Ce-(Sn: Cd) thin films
In the current investigation, we are fabricated the Schottky barrier diode (SBDs) formed on
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …
Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe: PVA via the admittance method
In this work, to gain detailed information about the electrical characteristics, interface traps
(D it), and their lifetimes (τ) of the metal-polymer-semiconductor (MPS) type structures …
(D it), and their lifetimes (τ) of the metal-polymer-semiconductor (MPS) type structures …
The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode
Abstract The Cu2CdSnS4 (CCTS) film has been prepared using the hydrothermal approach
and deposited on the p-type silicon wafer by the use of the sol–gel technique. Then, the …
and deposited on the p-type silicon wafer by the use of the sol–gel technique. Then, the …
The current–voltage (I–V) characteristics and low–high impedance measurements (C/G–V) of Au/(AgCdS: PVP)/n-Si Schottky diode (SD) at dark and under …
G Aslanbaş, P Durmuş, Ş Altındal… - Journal of Materials …, 2024 - Springer
In this study, Schottky diode (SD) with a structure of Au/(AgCdS: PVP)/n-Si has been
fabricated and then its electrical parameters and conduction mechanisms (CMs) …
fabricated and then its electrical parameters and conduction mechanisms (CMs) …
Optimization of PN Junction Diodes Using Crack-Free PbS Thin Films: The Role of Y³⁺ Doping via Jet Nebulizer Spray Pyrolysis
P Vidhya, K Shanmugasundaram, T Sasikala… - Physica B: Condensed …, 2024 - Elsevier
This study uses jet atomizer spray pyrolysis for photodiode applications to prepare PbS films
with varying Yttrium (Y) doping concentrations (0, 1, 3 and 5wt%). XRD results reveal that Y …
with varying Yttrium (Y) doping concentrations (0, 1, 3 and 5wt%). XRD results reveal that Y …
Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements …
This study examines a metal–semiconductor structure with an organic perylene interlayer by
measuring capacitance (C) and conductance (G/w) versus voltage under various lighting …
measuring capacitance (C) and conductance (G/w) versus voltage under various lighting …
Potential application of p-type diamane as back surface field layer in silicon-based heterojunction solar cells
A higher efficiency of photovoltaic cells can be attained by optimizing their design, selecting
the appropriate materials, and implementing of effective passivation process. The present …
the appropriate materials, and implementing of effective passivation process. The present …