A low-power SRAM design with enhanced stability and ION/IOFF ratio in FinFET technology for wearable device applications

E Abbasian, S Birla, A Sachdeva… - International Journal of …, 2024 - Taylor & Francis
Wearable device applications such as smartwatches, fitness trackers, and health monitors
rely on batteries for power and require static random-access memory (SRAM) with low …

A stable low leakage power SRAM with built-in read/write-assist scheme using GNRFETs for IoT applications

E Abbasian, T Mirzaei… - ECS Journal of Solid State …, 2022 - iopscience.iop.org
Abstract Design of circuits using graphene nanoribbon field-effect transistors (GNRFETs), as
promising next-generation devices, can improve total performance of a chip due to offering …

A novel CNTFET based Schmitt-Trigger read decoupled 12T SRAM cell with high speed, low power, and high Ion/Ioff ratio

L Soni, N Pandey - AEU-International Journal of Electronics and …, 2023 - Elsevier
Many researchers are working to develop a static random access memory (SRAM) cell that
uses low power, has good stability, better I on/I off ratio and speed. This paper presents a …

Design of radiation-hardened memory cell by polar design for space applications

L Hao, L Liu, Q Shi, B Qiang, Z Li, N Liu, C Dai… - Microelectronics …, 2023 - Elsevier
This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for
space applications. The proposed cell has the following advantages:(1) it can tolerate all …

A reliable and temperature variation tolerant 7T SRAM cell with single bitline configuration for low voltage application

B Rawat, P Mittal - Circuits, Systems, and Signal Processing, 2022 - Springer
Static random access memory is a key component for most microprocessor-based digital
devices. With the declining technology node and reducing supply voltage, it is essential to …

A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications

M Karamimanesh, E Abiri, K Hassanli… - … -International Journal of …, 2022 - Elsevier
In this paper, a robust sub-threshold 13 T-SRAM cell is designed, which in addition to
reducing power and energy consumption can show high reliability and have the least error …

A Reliable and high performance Radiation Hardened Schmitt Trigger 12T SRAM cell for space applications

L Soni, N Pandey - AEU-International Journal of Electronics and …, 2024 - Elsevier
In the vacuum of space, alpha particles and cosmic radiation can cause the node data to be
altered, leading to data loss. When a radiation particle hits a vulnerable point of the typical …

One‐sided 10T static‐random access memory cell for energy‐efficient and noise‐immune internet of things applications

A Darabi, MR Salehi, E Abiri - International Journal of Circuit …, 2023 - Wiley Online Library
This paper presents a one‐sided 10‐transistors static‐random access memory (SRAM) cell
appropriate for the internet of things (IoT) applications in which energy‐efficient SRAM cells …

[HTML][HTML] An efficient common source sense amplifier for single ended SRAM

J Leavline, A Sugantha - Memories-Materials, Devices, Circuits and …, 2023 - Elsevier
Sense amplifiers (SA) play a vital role in supporting the read performance of static random-
access memory (SRAM). Single ended SRAM has attracted importance due to low leakage …

Design of a 10-nm FinFET 11 T near-threshold SRAM cell for low-energy internet-of-things applications

E Abbasian, B Grailoo, M Nayeri - Circuits, Systems, and Signal …, 2023 - Springer
Internet-of-Things applications operate with restricted energy from a battery, and thus,
require static random-access memory (SRAM) cells, as the building block of a chip, with less …