Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions
This article provides a comprehensive overview is of AlGaN/GaN Metal Oxide
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
Enhancement of sensitivity in AlGaN/GaN HEMT based sensor using back-barrier technique
In the state of the art, most of the Gallium Nitride (GaN) High Electron Mobility Transistor
(HEMT) based sensors provide current readout rather than voltage readout. Further, to …
(HEMT) based sensors provide current readout rather than voltage readout. Further, to …
A highly sensitive Nano Gap Embedded AlGaN/GaN HEMT sensor for Anti-IRIS antibody detection
This study investigates the feasibility of Nano gap embedded AlGaN/GaN HEMT to sense
antibody-antigen reaction. The sensor can detect the binding response of a typical antibody …
antibody-antigen reaction. The sensor can detect the binding response of a typical antibody …
Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing
The effect of InGaN notch on sensitivity and Dielectric Modulated (DM) Double
Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
Sensing metrics of a dual-cavity single-gate MOSHEMT
This paper presents the simulation study of the impact of dielectric modulation on the
characteristics of a single-gate single-cavity and a single-gate dual-cavity AlGaN/GaN …
characteristics of a single-gate single-cavity and a single-gate dual-cavity AlGaN/GaN …
Performance Assessment of AlGaN/GaN HEMT for Human Serum Albumin Detection using Charge Deduction Methodology
This article investigates the applicability of an open-gated high-electron-mobility transistor
(HEMT) as a biosensing platform for human serum albumin (HSA). The 3 …
(HEMT) as a biosensing platform for human serum albumin (HSA). The 3 …
Sensitivity estimation of biosensor in a tapered cavity MOSHEMT
The present research provides a comprehensive investigation of the structural modification
at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility …
at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility …
Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing
GS Mishra, N Mohankumar… - Engineering Research …, 2024 - iopscience.iop.org
This paper focuses on the impact of gate-engineered dielectric-modulated GaN MOSHEMT
with InGaN notch on sensitivity enhancement for label-free biosensing. The novelty of this …
with InGaN notch on sensitivity enhancement for label-free biosensing. The novelty of this …
Impact of tapered dielectric on a gallium nitride metal oxide semiconductor high electron mobility transistor (MOSHEMT) towards biosensing applications
A Dastidar, TK Patra - Micro and Nanoelectronics Devices, Circuits and …, 2022 - Springer
This paper presents the sensitivity analysis of an AlGaN/GaN single gate MOSHEMT with a
tapered high-κ dielectric with a cavity under the gate for neutral biomolecules. The device …
tapered high-κ dielectric with a cavity under the gate for neutral biomolecules. The device …