Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
J Li, N Gao, D Cai, W Lin, K Huang, S Li… - Light: Science & …, 2021 - nature.com
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM …
Aluminium gallium nitride (AlGaN)-based deep ultraviolet (DUV) light-emitting diodes
(LEDs) suffer from low internal quantum efficiency (IQE) and serious efficiency droop. One …
(LEDs) suffer from low internal quantum efficiency (IQE) and serious efficiency droop. One …
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier
AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …
Research progress of AlGaN-based deep ultraviolet light-emitting diodes
R Xu, Q Kang, Y Zhang, X Zhang, Z Zhang - Micromachines, 2023 - mdpi.com
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …
Enhanced performance of an AlGaN-based deep-ultraviolet LED having graded quantum well structure
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum
confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) …
confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) …
Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer
Z Xing, F Wang, Y Wang, JJ Liou, Y Liu - Optics Express, 2022 - opg.optica.org
Aluminum-rich p-AlGaN electron blocking layers (EBLs) are typically used for preventing
overflow of electrons from the active region in AlGaN-based deep ultraviolet (DUV) laser …
overflow of electrons from the active region in AlGaN-based deep ultraviolet (DUV) laser …