Interference lithography is an effective method of patterning periodic structures with limits set
by light diffraction. Using this method at the short wavelengths of extreme ultraviolet (EUV) …

Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most
promising exposure source for next-generation semiconductor lithography. The …

Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning
integrated circuits and reaching sub-10-nm resolution within the next decade. Should …

The performance of EUV resists is one of the main challenges for the cost-effectiveness and
the introduction of EUV lithography into high-volume manufacturing. The EUV interference …

In last year's report, we discussed the design and requirements of the optical projection
module (Projection Optics Box [POB]) for the 0.5-NA Micro-field Exposure Tool (MET5) and …

In support of the Extreme Ultraviolet Lithography (EUVL) roadmap, a SEMATECH/CNSE
joint program is under way to develop 13.5 mn R and D photolithography tools with small …

A novel, non-chemically amplified negative resist was synthesized and characterized for
next generation lithography applications. This resist material was shown to be directly …

Although extreme ultraviolet (EUV) lithography is being considered as one of the most
promising next-generation lithography techniques for patterning sub-20 nm features, the …

Due to advantages of short exposure wavelength (13.5 nm) and high patterning resolution,
extreme ultraviolet (EUV) lithography is the state-of-the-art technology to break through the 3 …

It is a challenge to obtain sufficient extreme ultraviolet (EUV) exposure time for fundamental
research on developing a new class of high sensitivity resists for extreme ultraviolet …