Study of an phototransistor using a compact numerical method enabling detailed analysis of 2D material phototransistors

R Islam, IM Anjum, CR Menyuk, E Simsek - Scientific Reports, 2024 - nature.com
Research on two-dimensional material-based phototransistors has recently become a topic
of great interest. However, the high number of design features, which impact the …

[HTML][HTML] Perspectives on 2D materials for hybrid and beyond-Si image sensor applications

H Wan, Z Xu, Y Zhang, J Zhao, C Wang - 2D Materials, 2024 - editors.iopscience.iop.org
The complementary metal–oxide–semiconductor (CMOS) image sensor has become
essential and ubiquitous in our daily lives as it is present in almost every pocket. As demand …

Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs (111) B

M Hilse, J Rodriguez, J Gray, J Yao, S Ding… - arXiv preprint arXiv …, 2024 - arxiv.org
The top-down synthesis of inherently ferroelectric semiconductors and their integration with
traditional material platforms have the potential to enable new low power logic devices, and …

MoS2-based ultra-scaled photodetectors overcoming the diffraction limit

N El-Atab - Device, 2023 - cell.com
An ultra-scaled MoS 2-based phototransistor with a 20-nm channel length, leveraging the
photogating mechanism, is shown to overcome the diffraction limit in a new article by …

Development of Self‐Doped Monolayered 2D MoS2 for Enhanced Photoresponsivity

S Mallick, S Majumder, P Maiti, K Kesavan, A Rahman… - Small - Wiley Online Library
Transition metal dichalcogenides (TMDs) exist in two distinct phases: the thermodynamically
stable trigonal prismatic (2H) and the metastable octahedral (1T) phase. Phase engineering …