Recent developments and prospects of fully recessed MIS gate structures for GaN on Si power transistors
P Fernandes Paes Pinto Rocha, L Vauche… - Energies, 2023 - mdpi.com
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability: From leakage current analysis to gate stack optimization
K Mukherjee, C De Santi, M Borga, K Geens, S You… - Materials, 2021 - mdpi.com
The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …
702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
High-performance-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges
C Gupta, SS Pasayat - physica status solidi (a), 2022 - Wiley Online Library
Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide
(SiC) are rapidly making inroads into the power semiconductor markets dominated by the …
(SiC) are rapidly making inroads into the power semiconductor markets dominated by the …
Trench gate β-Ga2O3 MOSFETs: a review
X Chen, F Li, HL Hess - Engineering Research Express, 2023 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) has emerged as a promising candidate for ultra-wide
bandgap semiconductors for power devices due to its high breakdown field, large Baliga's …
bandgap semiconductors for power devices due to its high breakdown field, large Baliga's …
Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment
T Ishida, KP Nam, M Matys, T Uesugi… - Applied Physics …, 2020 - iopscience.iop.org
The electrical properties of vertical GaN trench MOSFETs without drift layers were evaluated
to investigate the effect of nitrogen plasma treatment on the trench sidewalls. It is …
to investigate the effect of nitrogen plasma treatment on the trench sidewalls. It is …
On the conduction properties of vertical GaN n-channel trench MISFETs
EB Treidel, O Hilt, V Hoffmann… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
ON-state conductance properties of vertical GaN n-channel trench MISFETs manufactured
on different GaN substrates and having different gate trench orientations are studied up to …
on different GaN substrates and having different gate trench orientations are studied up to …
Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs
W Tang, J Zhou, G Yu, X Wei, W Tang… - Applied Physics …, 2022 - iopscience.iop.org
Abstract Vertical GaN trench-gate MOSFETs with∼ 130 nm stepped sidewalls in the p-GaN
channel layer are studied and two significant influences have been observed compared to …
channel layer are studied and two significant influences have been observed compared to …
On the Baliga's figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate
A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing
the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown …
the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown …