We present the results of experimental studies of the influence of microwave radiation on the
diffusion processes in two different semiconductor materials, namely, InGaAs …

We reveal the feasibility of the localized surface plasmon resonance in a system of Bi
nanoparticles embedded into an Al x Ga 1− x As semiconductor matrix. With an ab initio …

The vacancy generation dynamics in doped semiconductor heterostructures with quantum
dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate …

The effect of thermally generated equilibrium carrier distribution on the vacancy generation,
recombination, and mobility in a semiconductor heterostructure with an undoped quantum …

Self-organization of As clusters is discussed in non-stoichiometric GaAs films grown by
molecular-beam epitaxy at low temperature. The physical principles and technological tools …

We have elucidated the microstructure of Al 0.28 Ga 0.72 As 0.972 Sb 0.028 metamaterial
containing a developed array of AsSb nanoinclusions. The AlGaAsSb films were grown by …

As–Sb compositional intermixing was studied by transmission electron microscopy (TEM) in
GaAs films grown by molecular-beam epitaxy at low temperature (LT) and δ doped with …

In this study, a theoretical model is developed for investigating the effect of thermal
annealing on a single-layer quaternary-capped (In 0.21 Al 0.21 Ga 0.58 As) InAs quantum …

We have designed a GaAs based structure in which the influence of the initial
supersaturation of solute atoms, here As, on the nucleation and conservative growth of a …

A nontraditional approach to the control of GaAs properties via the introduction of an
excessive amount of arsenic during growth of epitaxial layers under conditions of low …