The large variety of 2D materials and their co-integration in van der Waals heterostructures
enable innovative device engineering. In addition, their atomically thin nature promotes the …

Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

The discovery of an ever-increasing family of atomic layered magnetic materials, together
with the already established vast catalogue of strong spin–orbit coupling and topological …

The key challenge of spin–orbit torque applications lies in exploring an excellent spin
source capable of generating out-of-plane spins while exhibiting high spin Hall conductivity …

The development of spintronic devices based on spin–orbit torque requires the electrical-
current-driven field-free switching of magnetization in materials with perpendicular magnetic …

Summary Spin-orbit-torque (SOT)-driven perpendicular magnetization switching has
attracted great attention for designing energy-efficient, high-density, and thermal-stable …

Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical
manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency …

The non-volatile magnetoresistive random access memory (MRAM) is believed to facilitate
emerging applications, such as in-memory computing, neuromorphic computing and …

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including
topological insulators and topological semimetals, which combine atomically flat 2D layers …

Reproducible field-free spin–orbit torque (SOT)-driven perpendicular magnetization
switching is essential for the development of ultralow-power spintronic devices. However …