A self-assembled quantum dot (QD) gain medium has multiple favorable material properties
over conventional quantum well (QW) structures and bulk materials, including a large …

With this review paper we provide an overview of the main degradation mechanisms that
limit the long-term reliability of IR semiconductor lasers for silicon photonics applications …

We describe the initial efforts to use molecular beam epitaxy to grow InAs quantum dots on
GaAs via the Stranski–Krastanov transition and then discuss the initial efforts to use these …

We propose a novel methodology capable of separately evaluating the contribution of the
different recombination processes in quantum dot laser diodes (QD LDs) driven below …

<? TeX-2pc-0pc?> III-V semiconductor lasers integrated on Si-based photonic platforms are
eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip …

We study the impact of misfit dislocations on the luminescence from InAs quantum dots
(QDs) grown on Si substrates. Electron channeling contrast imaging is used together with …

This work investigates the performance of 1.3-μm quantum dot lasers epitaxially grown on
silicon under optical feedback sensitivity with different temperature and doping profiles …

Abstract Dilute bismides (% Bi∼ 1%–3%) are excellent candidates for the fabrication of
optoelectronic devices, thanks to the strong reduction in the bandgap with increasing …

This paper investigates the origin of the diffusion process responsible for the optical
degradation of InAs quantum dot (QD) laser diodes epitaxially grown on silicon. By means of …

This work investigates the degradation processes affecting the long-term reliability of 1.3 μm
InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to …