Optical properties of III-Mn-V ferromagnetic semiconductors
We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted
magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which …
magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which …
First-principles investigation of the assumptions underlying model-Hamiltonian approaches to ferromagnetism of impurities in III-V semiconductors
P Mahadevan, A Zunger - Physical Review B, 2004 - APS
We use first-principles calculations for transition-metal impurities V, Cr, Mn, Fe, Co, and Ni in
GaAs, as well as Cr and Mn in GaN, GaP, and GaSb, to identify the basic features of the …
GaAs, as well as Cr and Mn in GaN, GaP, and GaSb, to identify the basic features of the …
First-Principle Investigations of Structural, Electronic, and Half-Metallic Ferromagnetic Properties in In1−xTM x P (TM = Cr, Mn)
M Boutaleb, A Tadjer, B Doumi, A Djedid… - … of Superconductivity and …, 2014 - Springer
First-principle calculations within the framework of density functional theory are employed to
study the structural, electronic, and half-metallic ferromagnetic properties of In 1− x (TM) x P …
study the structural, electronic, and half-metallic ferromagnetic properties of In 1− x (TM) x P …
Neutral Mn acceptor in bulk GaN in high magnetic fields
A Wolos, A Wysmolek, M Kaminska, A Twardowski… - Physical Review B …, 2004 - APS
We present magneto-optical studies of intra-center absorption band related to neutral Mn
acceptor in GaN bulk crystals. The band is built of a zero-phonon line at 1.4166 eV followed …
acceptor in GaN bulk crystals. The band is built of a zero-phonon line at 1.4166 eV followed …
Mn and other magnetic impurities in GaN and other III–V semiconductors–perspective for spintronic applications
M Kaminska, A Twardowski, D Wasik - Journal of Materials Science …, 2008 - Springer
III–V semiconductors doped with magnetic ions have been attracting interest of many
laboratories all over the world during more than thirty years. At the beginning the reason was …
laboratories all over the world during more than thirty years. At the beginning the reason was …
Comparison of predicted ferromagnetic tendencies of Mn substituting the Ga site in III–V's and in chalcopyrite semiconductors
We report density-functional calculations of the ferromagnetic (FM) stabilization energy δ= E
FM− E AFM for differently oriented Mn pairs in III–V's (GaN, GaP, GaAs) and chalcopyrite …
FM− E AFM for differently oriented Mn pairs in III–V's (GaN, GaP, GaAs) and chalcopyrite …
Half-Metallic Ferromagnetic Property Related to Spintronic Applications in 3d (V, Cr, and Mn)-Doped GaP DMSs
Using the full-potential linearized augmented plane-wave method of first-principles
calculations of density functional theory, we have performed a systematic investigations on …
calculations of density functional theory, we have performed a systematic investigations on …
First-principles investigations of structural, elastic, electronic and magnetic properties of Ga 1− x Mn x P and In 1− x Mn x P
A Djedid, B Doumi, S Mecabih, B Abbar - Journal of Materials Science, 2013 - Springer
We employ the full-potential linearized augmented plane wave plus local orbital (FP L/APW+
lo) method based on the density functional theory (DFT) in order to investigate the structural …
lo) method based on the density functional theory (DFT) in order to investigate the structural …
Magnetic Impurities in Wide Band‐gap III–V Semiconductors
A Wolos, M Kaminska - Semiconductors and Semimetals, 2008 - Elsevier
Publisher Summary This chapter discusses the magnetic impurities in wide band-gap III–V
semiconductors. The chapter describes the general properties of diluted magnetic …
semiconductors. The chapter describes the general properties of diluted magnetic …
Mn configuration in III‐V semiconductors and its influence on electric transport and semiconductor magnetism
A Wolos, M Piersa, G Strzelecka… - … status solidi c, 2009 - Wiley Online Library
GaAs and GaP doped with Mn at wide range of concentrations were studied and compared
to literature data of InP and nitrides, GaN and AlN, in aim to understand the mechanism of …
to literature data of InP and nitrides, GaN and AlN, in aim to understand the mechanism of …