In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …

Van der Waals epitaxy provides a fertile playground for the monolithic integration of various
materials for advanced electronics and optoelectronics. Here, a previously unidentified …

Functional nanomaterials possess exceptional mechanical, electrical, and optical properties
which have significantly benefited their diverse applications to a variety of scientific and …

High-quality GaN-based light emitting diode (LED) wafers on La0. 3Sr1. 7AlTaO6
(LSAT)(111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the …

P-type doping of GaN by pulsed sputtering deposition (PSD) at a low growth temperature of
480 C and dramatic reduction in the growth process temperature for InGaN-based light …

Recently, achieving flexible and highly efficient light‐emitting elements is the most
noticeable demand for lighting or displays. Here, fully flexible gallium nitride (GaN) light …

We report the successful preparation of polycrystalline gallium nitride (poly-GaN) layers by
thermal atomic layer deposition (ALD) at low temperatures (375–425° C) from …

Here, we explore a catalyst-free single-step growth strategy that results in high-quality self-
assembled single-crystal vertical GaN nanowires (NWs) grown on a wide range of common …

We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To
control the preferred orientation and length of individual GaN nanorods, we combined …

Nanomaterials possess superior mechanical, electrical, and optical properties suitable for
device applications in different fields such as nanoelectronics, photonics, and sensors …