Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
This article reviews the development of SiC and GaN devices for power-switching
applications in the context of four specifically identified application requirements:(1) high …
applications in the context of four specifically identified application requirements:(1) high …
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances
ST Pantelides, S Wang, A Franceschetti… - Materials science …, 2006 - Trans Tech Publ
Silicon has been the semiconductor of choice for microelectronics largely because of the
unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature …
unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature …
[HTML][HTML] High-pressure microwave plasma oxidation of 4H-SiC with low interface trap density
X Liu, J Hao, N You, Y Bai, S Wang - AIP Advances, 2019 - pubs.aip.org
Microwave plasma oxidation under a relatively high pressure (6 kPa) region is developed to
rapidly grow a high-quality SiO 2 layer on 4H-SiC, based on a thermodynamic analysis of …
rapidly grow a high-quality SiO 2 layer on 4H-SiC, based on a thermodynamic analysis of …
Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide
C Kim, J Hyun Moon, J Hyuk Yim, H Do Lee… - Applied Physics …, 2012 - pubs.aip.org
The electrical properties of thermally grown and atomic-layer-deposition (ALD) oxides,
followed by nitridation treatment, on 4H-SiC substrate were compared. The nitridation …
followed by nitridation treatment, on 4H-SiC substrate were compared. The nitridation …
High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
XY Liu, JL Hao, NN You, Y Bai, YD Tang… - Chinese …, 2020 - iopscience.iop.org
The microwave plasma oxidation under the relatively high pressure (6 kPa) region is
introduced into the fabrication process of SiO 2/4H-SiC stack. By controlling the oxidation …
introduced into the fabrication process of SiO 2/4H-SiC stack. By controlling the oxidation …
Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing
Oxide deposition followed by high-temperature annealing in N2O has been investigated to
improve the quality of 4H-SiC MOS structures. Annealing of deposited oxides in N2O at …
improve the quality of 4H-SiC MOS structures. Annealing of deposited oxides in N2O at …
Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
SC Heo, D Lim, WS Jung, R Choi, HY Yu… - Microelectronic …, 2015 - Elsevier
Hydrogen (H 2) plasma treatment at the interface between 4H-SiC substrate and Al 2 O 3
dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on …
dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on …
Progress in SiC materials/devices and their competition
DK SCHRODER - International Journal of High Speed Electronics …, 2012 - World Scientific
Power semiconductor devices are important for numerous applications with power
conversion being an important one. Wide energy gap semiconductors SiC and GaN have …
conversion being an important one. Wide energy gap semiconductors SiC and GaN have …
Two-component model for long-term prediction of threshold voltage shifts in SiC MOSFETs under negative bias stress
M Matsumura, K Kobayashi, Y Mori… - Japanese Journal of …, 2015 - iopscience.iop.org
The negative bias temperature instability in SiC MOSFETs was investigated. Considering
the time, temperature, and bias dependences of the threshold-voltage (V th) shift, we …
the time, temperature, and bias dependences of the threshold-voltage (V th) shift, we …
4H-SiC MIS Capacitors and MISFETs With Deposited Stack-Gate Structures
SiN x/SiO 2 stack-gate structures, followed by N 2 O annealing, have been investigated to
improve the 4H-SiC metal-insulator-semiconductor (MIS) interface quality. Capacitance …
improve the 4H-SiC metal-insulator-semiconductor (MIS) interface quality. Capacitance …