Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices
T Zhang, M Li, J Chen, Y Wang, L Miao, Y Lu… - Materials Science and …, 2022 - Elsevier
The desire for developing ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …
A comprehensive review of ZnO materials and devices
The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …
because of its large exciton binding energy (60 meV) which could lead to lasing action …
Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO
ZnO typifies a class of materials that can be doped via native defects in only one way: either
n type or p type. We explain this asymmetry in ZnO via a study of its intrinsic defect physics …
n type or p type. We explain this asymmetry in ZnO via a study of its intrinsic defect physics …
Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
Y Chen, DM Bagnall, H Koh, K Park, K Hiraga… - Journal of Applied …, 1998 - pubs.aip.org
ZnO single crystal thin films were grown on c-plane sapphire using oxygen microwave
plasma assisted molecular beam epitaxy. Atomically flat oxygen-terminated substrate …
plasma assisted molecular beam epitaxy. Atomically flat oxygen-terminated substrate …
High temperature excitonic stimulated emission from ZnO epitaxial layers
DM Bagnall, YF Chen, Z Zhu, T Yao, MY Shen… - Applied Physics …, 1998 - pubs.aip.org
The emission spectrum of high quality ZnO epilayers is studied from room temperature up to
550 K. At room temperature and low excitation power a single emission peak is observed …
550 K. At room temperature and low excitation power a single emission peak is observed …
Growth conditions for wurtzite zinc oxide films in aqueous solutions
S Yamabi, H Imai - Journal of materials chemistry, 2002 - pubs.rsc.org
A pH above 9.0 was essential for the formation of wurtzite zinc oxide (ZnO) in aqueous
solution systems. The addition of complexing agents to decrease the deposition rate was …
solution systems. The addition of complexing agents to decrease the deposition rate was …
ZnO as a novel photonic material for the UV region
This paper will address the feasibility of ZnO as photonic material for the UV region. ZnO
films are grown by plasma-assisted MBE. Detailed XRD studies suggest the growth of …
films are grown by plasma-assisted MBE. Detailed XRD studies suggest the growth of …
Deep-level emissions influenced by O and Zn implantations in ZnO
QX Zhao, P Klason, M Willander, HM Zhong… - Applied Physics …, 2005 - pubs.aip.org
A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by
photoluminescence. The implantation concentration of O and Zn is varied between 1× 10 …
photoluminescence. The implantation concentration of O and Zn is varied between 1× 10 …
High-output nanogenerator by rational unipolar assembly of conical nanowires and its application for driving a small liquid crystal display
We present a simple, cost-effective, robust, and scalable approach for fabricating a
nanogenerator that gives an output power strong enough to continuously drive a commercial …
nanogenerator that gives an output power strong enough to continuously drive a commercial …
Epitaxial growth of ZnO films
R Triboulet, J Perriere - Progress in Crystal Growth and Characterization of …, 2003 - Elsevier
After summing up the main physical properties of ZnO and its subsequent applications the
aim of this article is to review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and …
aim of this article is to review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and …