Ge and Sn are unreactive at ambient conditions. Their significant promise for optoelectronic
applications is thus largely confined to thin film investigations. We sought to remove barriers …

High-pressure and-temperature experiments on Ge and Si mixtures to 17 GPa and 1500 K
allow us to obtain extended Ge–Si solid solutions with cubic (Ia 3̅) and tetragonal (P …

Multi‐anvil and laser‐heated diamond anvil methods have been used to subject Ge and Si
mixtures to pressures and temperatures of between 12 and 17 GPa and 1500–1800 K …

The cubic diamond (Fd m) group IVA element Si has been the material driver of the
electronics industry since its inception. We report synthesis of a new cubic (Im m) group IVA …

Unlike the complete solid solution of silicon–germanium, the temperature–composition
phase diagram of neighbouring germanium–tin is characterised by virtually no bulk mutual …

Ge x Sn 1− x has been predicted to be a direct band‐gap semiconductor, but attempts to
synthesize this in bulk form by conventional synthesis methods have not been successful on …

High pressure and temperature experiments on Ge− Sn mixtures to 24 GPa and 2000 K
reveal segregation of Sn from Ge below 10 GPa whereas Ge− Sn agglomerates persist …

Ge–Sn compound is predicted to be a direct band gap semiconductor with a tunable band
gap. However, the bulk synthesis of this material by conventional methods at ambient …

High density nitrides and group IV alloys are of growing importance for both ceramic and
optoelectronic applications. We present here new data and processes in our ongoing …

Abstract Bulk Ge-Sn chemical compounds have rarely been synthesized at ambient
pressure, due to the low solubility of Sn in Ge. Atomic and electronic structures can be …