State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …
decades. Notable progress has recently been made in this research area, fueled by …
Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap
N Collaert, A Alian, H Arimura, G Boccardi… - Microelectronic …, 2015 - Elsevier
In this work, we will give an overview of the innovations in materials and new device
concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To …
concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To …
III-V Devices and technology for CMOS
N Waldron - High Mobility Materials for CMOS Applications, 2018 - Elsevier
In this chapter, advances in the use of III-V materials for both n-and p-MOSFET devices will
be reviewed including progress in gate stack technology and its associated reliability. For …
be reviewed including progress in gate stack technology and its associated reliability. For …
CMP processing of high mobility channel materials: Alternatives to Si
P Ong, L Teugels - Advances in Chemical Mechanical Planarization (CMP …, 2016 - Elsevier
This chapter overviews chemical mechanical polishing (CMP) processes for the
implementation of high mobility materials in advanced complementary metal-oxide …
implementation of high mobility materials in advanced complementary metal-oxide …
Passivated III-V or Ge fin-shaped field effect transistor
C Merckling, M Caymax - US Patent 9,425,314, 2016 - Google Patents
(57) ABSTRACT A semiconductor device includes a semiconductor Substrate having a top
Surface, and at least one coated fin protruding perpendicularly from the surface and having …
Surface, and at least one coated fin protruding perpendicularly from the surface and having …
Beyond-Si materials and devices for more Moore and more than Moore applications
N Collaert, A Alian, H Arimura… - … Conference on IC …, 2016 - ieeexplore.ieee.org
In this work, we will review the current progress in high mobility devices and new device
architectures. With main focus on (Si) Ge for pMOS and In (Ga) As for nMOS, the benefits …
architectures. With main focus on (Si) Ge for pMOS and In (Ga) As for nMOS, the benefits …
Challenges for advanced end of the roadmap, beyond Si and beyond CMOS technologies
C Claeys, E Simoen - 2017 32nd Symposium on …, 2017 - ieeexplore.ieee.org
Future technologies put stringent demands on materials, process modules and device
architectures. Design considerations favor the future use of vertical devices like tunnelFETs …
architectures. Design considerations favor the future use of vertical devices like tunnelFETs …
From FinFET to Nanosheets and Beyond
N Collaert - Springer Handbook of Semiconductor Devices, 2022 - Springer
Moore's law has for more than five decades been the roadmap guiding the semiconductor
industry. While originally driven by lithography advancements and material innovation, since …
industry. While originally driven by lithography advancements and material innovation, since …
Are Extended Defects a Show Stopper for Future III-V CMOS Technologies
C Claeys, PC Hsu, L He, Y Mols… - Journal of Physics …, 2019 - iopscience.iop.org
The paper briefly reviews some of the present-day state-of-the art III-V devices processed on
a Si platform reported in the literature, before addressing defect engineering aspects for III-V …
a Si platform reported in the literature, before addressing defect engineering aspects for III-V …