In this paper we investigate the optimized design of a short channel gate-all-around-
junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including …

An analytical 2-D model of double-gate metal-ferroelectric-insulator-semiconductor-negative-
capacitance FET (MFIS-NCFET), using Green's function approach, in the subthreshold …

This paper compares two different analytic solutions to the 2-D potential in double-gate
MOSFETs in subthreshold: Green's function method and scale length model. Both models …

We present a comprehensive study of multidomain (MD) effects in a perpendicular magnetic
tunnel junction (p-MTJ). The MD nucleation is considered in the free layer of MTJ, which …

In this article, we present the dynamics and modeling of multidomains in the ferroelectric
FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit …

Ferroelectric tunnel junction (FTJ) with the dead layer (DE) exhibits the multidomain texture.
These multidomains in the ferroelectric (FE) cause the 2-D gradients in local polarization …

This paper explores the temperature sensitivity of Inner-gate engineered junctionless silicon
nanotube FET (JL-SiNT-FET) on analog/RF performance. It is found that the reduction in the …

We have derived the 2-D analytical multidomain electrostatics model of the ferroelectric
tunnel junction (FTJ) in part-I of this work. Here, we have used the 2-D potential functions …

The impact of negative capacitance (NC) of the ferroelectric materials in controlling the direct
source to drain tunneling (DSDT) in ultra-short channel FETs is presented in this paper …

Abstract In this work, AlGaN/GaN based DG MOSHEMT is designed at 0.8 µm gate length
with Al 2 O 3 gate dielectric. The key device performance parameter such as gm, AV, f T, and …