Resonant tunneling properties of laser dressed hyperbolic Pöschl-Teller double barrier potential
M Batı - Physica E: Low-dimensional Systems and …, 2025 - Elsevier
We examine the resonant tunneling properties of the laser-dressed hyperbolic Pöschl-Teller
double quantum barrier structure. We use the non-equilibrium Green's function method to …
double quantum barrier structure. We use the non-equilibrium Green's function method to …
In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band
We report about an In 0.53 Ga 0.47 As/AlAs doublebarrier resonant tunnelling diode (RTD)
epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100 …
epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100 …
Computational design of a (5, 0) CNT-InN nanotube heterojunction as a resonant tunneling diode
M Kamalian - Indian Journal of Physics, 2023 - Springer
In this paper, transport properties of a heterojunction based on (5, 0) carbon nanotube and
(5, 0) indium nitride nanotube were investigated using Density Functional Theory combined …
(5, 0) indium nitride nanotube were investigated using Density Functional Theory combined …
Epitaxial Structure Simulation Study of In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes
D Cimbri, J Wang, E Wasige - 2022 Fifth International …, 2022 - ieeexplore.ieee.org
We present an epitaxial structure simulation study of In 0.53 Ga 0.47 As/AlAs double-barrier
resonant tunnelling diodes (RTD) employing Atlas TCAD quantum transport simulation …
resonant tunnelling diodes (RTD) employing Atlas TCAD quantum transport simulation …
Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes
In this paper, we develop an analytical model for the resonant current-voltage (I–V)
characteristics of 2D-2D Resonant Tunneling Diodes. Starting from the Tsu-Esaki formalism …
characteristics of 2D-2D Resonant Tunneling Diodes. Starting from the Tsu-Esaki formalism …
A High-Power InP Resonant Tunnelling Diode Heterostructure for 300-GHz Oscillator Sources
A high-power double-barrier resonant tunnelling diode (RTD) epitaxial structure in InP
technology is reported. The heterostructure exhibits moderate available current density …
technology is reported. The heterostructure exhibits moderate available current density …
Optimized Design and Implementation of Double-Barrier Resonant Tunneling Diodes
B Liu, J Liu, R Song, N Liu, S Liang… - 2023 16th UK-Europe …, 2023 - ieeexplore.ieee.org
This paper presents the optimized design and implementation of double-barrier resonant
tunneling diodes (RTDs). The effect of junction size in the epitaxial layer structure of the RTD …
tunneling diodes (RTDs). The effect of junction size in the epitaxial layer structure of the RTD …