With the rapid development of on-chip optical interconnects and optical computing in the
past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic …

A silicon-based monolithic laser source has long been envisioned as a key enabling
component for large-scale electronic–photonic integration in future generations of high …

Serving as the electrical to optical converter, the on-chip silicon light source is an
indispensable component of silicon photonic technologies and has long been pursued …

We report uniaxial tensile strains up to 5.7% along〈 100〉 in suspended germanium (Ge)
wires on a silicon substrate, measured using Raman spectroscopy. This strain is sufficient to …

Advances in conventional inorganic photoactive materials, such as silicon and III–V
compound semiconductors, enabled the development of high-performance and energy …

Germanium tin (GeSn) is a group IV semiconductor with a direct band-to-band transition
below 0.8 eV. Nonequilibrium GeSn alloys up to 20% Sn content were realized with low …

Up to now, the light coupling schemes of germanium-on-silicon photodetectors (Ge-on-Si
PDs) could be divided into three main categories:(1) vertical (or normal-incidence) …

We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the
simplified fabrication process, the device shows a responsivity of 1.14 A/W at− 4 V reverse …

All-optical modulation has been demonstrated in a germanium-on-silicon rib waveguide
over the mid-infrared wavelength range of 2–3 μm using a free-carrier absorption scheme …

Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …